V
RRM
= 50 V - 200 V
I
F(AV)
= 100 A
Features
• High Surge Capability Three Tower Package
• Types from 50 V to 200 V V
RR
M
• Isolation Type Package
•
Electrically
Isolated base plate
•
N
ot ESD Sensitive
Parameter Symbol MURT10005(R) MURT10010(R) Unit
Repetitive peak reverse voltage
V
RRM
50 100 V
RMS reverse voltage
V
RMS
35 71 V
MURT10005 thru MURT10020R
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions MURT10020(R)
200
141
Silicon Super Fast
Recover
y
Diode
DC blocking voltage
V
DC
50 100 V
Operating temperature
T
j
-55 to 150 -55 to 150 °C
Storage temperature
T
stg
-55 to 150 -55 to 150 °C
Parameter Symbol MURT10005(R) MURT10010(R) Unit
Average forward current (per
pkg)
I
F(AV)
100 100 A
Peak forward surge current (per
leg)
I
FSM
1500 1500 A
Maximum instantaneous
forward voltage (per leg)
1.0 1.0
25 25 μA
11 mA
Maximum reverse recovery
time (per leg)
T
rr
75 75 nS
Thermal characteristics
Thermal resistance, junction -
case (per leg)
R
ΘJC
1.0 1.0 °C/W
T
j
= 25 °C
I
FM
= 50 A, T
j
= 25 °C
Conditions
200
V
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Maximum instantaneous
reverse current at rated DC
blocking voltage (per leg)
I
R
V
F
T
j
= 125 °C
MURT10020(R)
-55 to 150
-55 to 150
1.0
25
T
C
= 140 °C
100
t
p
= 8.3 ms, half sine
1500
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
75
1.0
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