CHA6653-QXG
Ref. : DSCHA6653-QXG8162 - 11 Jun 18
1/16
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
27- 33.5GHz Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
36 lead 6x5 mm QFN package
The CHA6653-QXG is a four stage
monolithic GaAs high power circuit producing
1.8 Watt output power. It is highly linear, with
possible gain control and integrates a power
detector. ESD protections are included.
It is designed for Point To Point Radio.
The circuit is manufactured with a pHEMT
process, 0.15µm gate length.
It is supplied in RoHS compliant SMD
package.
Main Features
Output power vs frequency
■ Broadband performances: 27- 33.5GHz
■ 32.5dBm saturated power
■ 38dBm OIP3
■ 20dB gain
■ DC bias: Vd = 6.0Volt @ Id = 0.9A
■ QFN 6x5
■ MSL3
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Min
Typ
Max
Unit
Freq
Frequency range
27
33.5
GHz
Gain
Linear Gain
20
dB
Psat
Saturated output power
32.5
dBm
OIP3
Output IP3
38
dBm
15
17
19
21
23
25
27
29
31
33
35
26 27 28 29 30 31 32 33 34 35
Output power (dBm) & PAE (%)
Frequency (GHz)
P1dB
P4dB
PAE @sat
CHA6653-QXG
27- 33.5GHz Power Amplifier
Ref. : DSCHA6653-QXG8162 - 11 Jun 18
2/16
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
Electrical Characteristics
Tamb.= +25°C, Vd = +6.0V
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range
27
33.5
GHz
Gain
Small Signal Gain
20
dB
ΔG
Gain variation in temperature
± 0.03
dB/°C
Psat
Saturated Output Power in 27 - 30GHz
Saturated Output Power in 31 - 33.5GHz
33
32.5
dBm
OIP3
Output IP3
38
dBm
PAE
PAE at saturation in 27 - 30GHz
PAE at saturation in 31 - 33.5GHz
23
20
%
CG
Gain control range
15
dB
Rlin
Input Return Loss in 27 - 30GHz
Input Return Loss in 31 - 33.5GHz
13
10
dB
Rlout
Output Return Loss
12
dB
NF
Noise figure at nominal gain
6
dB
Dr
Detection dynamic range(for output power
detection up to Psat)
30
dB
Vdetect
Voltage detection V
REF
- V
DET
up to Psat
10 to
2000
mV
Vg
DC gate Voltage
-0.65
V
Idq
Total drain current
0.9
A
These values are representative of onboard measurements as defined on the drawing in
paragraph "Evaluation mother board".