CHA5266-FAA
Ref.: DSCHA5266-FAA8005 - 05 Jan 18
1/18
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
10-16GHz Medium Power Amplifier
GaAs Monolithic Microwave IC in SMD Ceramic Hermetic package
Description
The CHA5266-FAA is a three stage
monolithic GaAs medium power amplifier in
leadless surface mount hermetic metal
ceramic 6x6mm² package.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is supplied in RoHS compliant SMD
package.
Main Features
■ Broadband performances: 10-16GHz
■ 24dB Linear Gain
■ 26dBm output power @ 1dB comp.
■ 35.5dBm output IP3
■ DC bias: Vd = 5.0Volt @Idq = 320mA
■ 6x6mm² hermetic metal ceramic package
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Min
Typ
Max
Unit
Freq
10
16
GHz
Gain
24
dB
P1dB
26
dBm
OIP3
35.5
dBm
VD3
RF OUT
RF IN
VG3
VD2
VD1
VG2
VG1
CHA5266-FAA
10-16GHz Medium Power Amplifier
Ref.: DSCHA5266-FAA8005 - 05 Jan 18
2/18
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
Electrical Characteristics
Tamb.= +25°C, Vd = +5V / Idq=320mA
Symbol
Min
Typ
Max
Unit
Freq
10
16
GHz
Gain
24
dB
RL_in
11
dB
RL_out
20
dB
P1dB
26
dBm
Psat
27.5
dBm
OIP3
35.5
dBm
Idq
320
mA
Vg
-0.35
V
These values are representative of onboard measurements as defined on the drawing in
paragraph "Evaluation mother board".