DTC123Y series
NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor)
Datasheet
llOutline
Parameter Value
SOT-416FL SOT-416
V
CC
50V
　　 　　
I
C(MAX.)
100mA
R
1
2.2kΩ
DTC123YEB DTC123YE
R
2
10kΩ
(EMT3F) (EMT3)
SOT-323 SOT-346
llFeatures
　　 　　
1) Built-In Biasing Resistors,
　 R
1
= 2.2kΩ, R
2
= 10kΩ
2) Built-in bias resistors enable the configuration of
　an inverter circuit without connecting external
　input resistors (see inner circuit) .
3) Only the on/off conditions need to be set
　for operation, making the circuit design easy.
4) Complementary PNP Types: DTA123Y series
DTC123YUA DTC123YKA
(UMT3) (SMT3)
llApplication
INVERTER, INTERFACE, DRIVER
llInner circuit
DTC123YEB DTC123YE/ DTC123YUA/ DTC123YKA
llPackaging specifications
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　
Part No. Package
Package
size
Taping
code
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit.(pcs)
Marking
DTC123YEB
SOT-416FL
(EMT3F)
1616 TL 180 8 3000 62
DTC123YE
SOT-416
(EMT3)
1616 TL 180 8 3000 62
DTC123YUA
SOT-323
(UMT3)
2021 T106 180 8 3000 62
DTC123YKA
SOT-346
(SMT3)
2928 T146 180 8 3000 62
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　
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20160112 - Rev.002
DTC123Y series
　 　 　 　 　 　 　 　 　
Datasheet
llAbsolute maximum ratings (T
a
= 25°C)
Parameter Symbol Values Unit
Supply voltage
V
CC
50 V
Input voltage
V
IN
-5 to 12 V
Output current
I
O
100 mA
Collector current
I
C(MAX)
*1
100 mA
Power dissipation
DTC123YEB
P
D
*2
150
mW
DTC123YE 150
DTC123YUA 200
DTC123YKA 200
Junction temperature
T
j
150 ℃
Range of storage temperature
T
stg
-55 to +150 ℃
llElectrical characteristics (T
a
= 25°C)
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
Input voltage
V
I(off)
V
CC
= 5V, I
O
= 100μA - - 0.3
V
V
I(on)
V
O
= 0.3V, I
O
= 20mA 3.0 - -
Output voltage
V
O(on)
I
O
= 10mA, I
I
= 0.5mA - 100 300 mV
Input current
I
I
V
I
= 5V - - 3.8 mA
Output current
I
O(off)
V
CC
= 50V, V
I
= 0V - - 500 nA
DC current gain
G
I
V
O
= 5V, I
O
= 10mA 33 - - -
Input resistance
R
1
- 1.54 2.2 2.86 kΩ
Resistance ratio
R
2
/R
1
- 3.6 4.5 5.5 -
Transition frequency
f
T
*1
V
CE
= 10V, I
E
= -5mA,
f = 100MHz
- 250 - MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land.
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　　 　 　 　　　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/8
20160112 - Rev.002