V
RM
= 200 V, I
F(AV)
= 0.8 A, t
rr
= 400 ns
Fast Recovery Diode
AU02Z Data Sheet
AU02Z-DSE Rev.1.0 SANKEN ELCTRIC CO., LTD. 1
Jul. 09, 2018 http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2018
Description
The AU02Z is a fast recovery diode of 200 V / 0.8 A.
The maximum t
rr
of 400 ns is realized by optimizing a
life-time control.
Features
● V
RM
------------------------------------------------------ 200 V
● I
F(AV)
------------------------------------------------------ 0.8 A
● V
F
--------------------------------------------------------- 1.3 V
● t
rr1
-------------------------------------------------------- 400 ns
● Bare Leads: Pb-free (RoHS Compliant)
Applications
● Secondary Side Rectifier Diode
(Flyback Converter, LLC Converter, etc.)
● Freewheel Diode
(Offline Buck and Buck-boost Converter)
Package
Axial (φ2.4 × 2.9L / φ0.57)
(1)
(2)
(1) Cathode
(2) Anode
Not to scale
余白上 35mm
Cathode Mark
(1)
(2)
AU02Z
AU02Z-DSE Rev.1.0 SANKEN ELCTRIC CO., LTD. 2
Jul. 09, 2018 http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2018
Absolute Maximum Ratings
Unless otherwise specified, T
A
= 25 °C
Parameter
Symbol
Conditions
Rating
Unit
Peak Repetitive Reverse Voltage
V
RSM
250
V
Repetitive Reverse Voltage
V
RM
200
V
Average Forward Current
I
F(AV)
See Figure 2 and Figure 3
0.8
A
Surge Forward Current
I
FSM
Half cycle sine wave,
positive side, 10 ms,
1 shot
25
A
I
2
t Limiting Value
I
2
t
1 ms ≤ t ≤ 10 ms
3.13
A
2
s
Junction Temperature
T
J
−40 to 150
°C
Storage Temperature
T
STG
−40 to 150
°C
Electrical Characteristics
Unless otherwise specified, T
A
= 25 °C
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Forward Voltage Drop
V
F
T
J
= 25 °C, I
F
= 0.8 A
—
—
1.3
V
T
J
= 100 °C, I
F
= 0.8 A
—
0.8
—
V
Reverse Leakage Current
I
R
V
R
= V
RM,
—
—
10
µA
Reverse Leakage Current
Under High Temperature
H∙I
R
V
R
= V
RM
, T
J
= 100 °C
—
—
250
µA
Reverse Recovery Time
t
rr1
I
F
= I
RP
= 10 mA,
90% recovery point,
T
J
= 25 °C
—
—
400
ns
t
rr2
I
F
= 10 mA,
I
RP
= 20 mA,
75% recovery point,
T
J
= 25 °C
—
—
180
ns
Thermal Resistance
(1)
R
th(J-L)
See Figure 1
—
—
22
°C/W
Device
Diameter of soldering area: φ3 mm
Cupper thickness: 50 µm
T
L
1.6 mm
5 mm
Figure 1 Lead Temperature Measurement Conditions
(1)
R
th (J-L)
is thermal resistance between junction and lead.