RB731XN
Schottky Barrier Diode
Data sheet
●Outline
V
R
40 V
I
o
30 mA
I
FSM
0.2 A
●Features
●Inner Circuit
High reliability
Small mold type
Low capacitance
●Application
●Packaging Specifications
High speed switching Packing Embossed Tape
Reel Size(mm) 180
Taping Width(mm) 8
●Structure Basic Ordering Unit(pcs) 3000
Epitaxial planar Taping Code TR
Marking D3P
●Absolute Maximum Ratings
(T
a
= 25ºC unless otherwise stated)
Parameter Symbol Conditions Limits Unit
Repetitive peak reverse voltage
V
RM
Duty≦0.5 40 V
Reverse voltage
V
R
Reverse direct voltage 40 V
Average rectified forward current
I
o
Glass epoxy mounted、60Hz half sin
waveform、resistive load、per diode
30 mA
Peak forward surge current
I
FSM
60Hz half sin waveform、Non-repetitive、
one cycle、per diode、T
a
=25ºC
0.2 A
Junction temperature
T
j
- 125 ℃
Storage temperature
T
stg
- -40 ～ 125 ℃
●Characteristics
(T
a
= 25ºC unless otherwise stated)
Value per diode
Parameter Symbol Conditions Min. Typ. Max. Unit
Forward voltage
V
F
I
F
=1mA
- - 0.37 V
Reverse current
I
R
V
R
=10V
- - 1 μA
Capacitance between terminals
C
t
V
R
=1V f=1MHz
- 2 - pF
※Caution：static electricity
Attention
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2016/09/28_Rev.001
