EMH11 / UMH11N / IMH11A
Datasheet
llAbsolute maximum ratings (T
a
= 25°C)
<For DTr1 and DTr2 in common>
Parameter Symbol Values Unit
Supply voltage
V
CC
50 V
Input voltage
V
IN
-10 to 40 V
Output current
I
O
50 mA
Collector current
I
C(MAX)
*1
100 mA
Power dissipation
EMH11
P
D
*2*3
150
mW
UMH11N
P
D
*2*3
150
IMH11A
P
D
*2*4
300
Junction temperature
T
j
150 ℃
Range of storage temperature
T
stg
-55 to +150 ℃
llElectrical characteristics (T
a
= 25°C)
<For DTr1 and DTr2 in common>
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
Input voltage
V
I(off)
V
CC
= 5V, I
O
= 100μA - - 0.5
V
V
I(on)
V
O
= 0.3V, I
O
= 10mA
3.0 - -
Output voltage
V
O(on)
I
O
= 10mA, I
I
= 0.5mA
- 100 300 mV
Input current
I
I
V
I
= 5V
- - 880 μA
Output current
I
O(off)
V
CC
= 50V, V
I
= 0V
- - 500 nA
DC current gain
G
I
V
O
= 5V, I
O
= 5mA
30 - - -
Input resistance
R
1
- 7 10 13 kΩ
Resistance ratio
R
2
/R
1
- 0.8 1.0 1.2 -
Transition frequency
f
T
V
CE
= 10V, I
E
= -5mA,
f = 100MHz
- 250 - MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land.
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
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20151001 - Rev.002