EMH11 / UMH11N / IMH11A
General purpose (dual digital transistors)
Datasheet
llOutline
Parameter DTr1 and DTr2
SOT-563 SOT-363
V
CC
50V
     
I
C(MAX.)
100mA
R
1
10kΩ
EMH11 UMH11N
R
2
10kΩ
(EMT6) (UMT6)
SOT-457
     
               
llFeatures
  
  
1)Two DTC114E chips in a EMT or UMT or
  SMT package.
2)Mounting possible with EMT3 or UMT3 or
  SMT3 automatic mounting machines.
3)Transistor elements are independent,
  eliminating interference.
4)Mounting cost and area can be cut in half.
  
  
IMH11A
 
(SMT6)  
     
               
llInner circuit
EMH11 / UMH11N
IMH11A
llApplication
INVERTER, INTERFACE, DRIVER
llPackaging specifications
           
Part No. Package
Package
size
Taping
code
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit.(pcs)
Marking
EMH11
SOT-563
(EMT6)
1616 T2R 180 8 8000 H11
UMH11N
SOT-363
(UMT6)
2021 TN 180 8 3000 H11
IMH11A
SOT-457
(SMT6)
2928 T110 180 8 3000 H11
                                                                                         
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© 2015 ROHM Co., Ltd. All rights reserved.
1/7
20151001 - Rev.002
EMH11 / UMH11N / IMH11A
Datasheet
llAbsolute maximum ratings (T
a
= 25°C)
<For DTr1 and DTr2 in common>
Parameter Symbol Values Unit
Supply voltage
V
CC
50 V
Input voltage
V
IN
-10 to 40 V
Output current
I
O
50 mA
Collector current
I
C(MAX)
*1
100 mA
Power dissipation
EMH11
P
D
*2*3
150
mW
UMH11N
P
D
*2*3
150
IMH11A
P
D
*2*4
300
Junction temperature
T
j
150
Range of storage temperature
T
stg
-55 to +150
llElectrical characteristics (T
a
= 25°C)
<For DTr1 and DTr2 in common>
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
Input voltage
V
I(off)
V
CC
= 5V, I
O
= 100μA - - 0.5
V
V
I(on)
V
O
= 0.3V, I
O
= 10mA
3.0 - -
Output voltage
V
O(on)
I
O
= 10mA, I
I
= 0.5mA
- 100 300 mV
Input current
I
I
V
I
= 5V
- - 880 μA
Output current
I
O(off)
V
CC
= 50V, V
I
= 0V
- - 500 nA
DC current gain
G
I
V
O
= 5V, I
O
= 5mA
30 - - -
Input resistance
R
1
- 7 10 13 kΩ
Resistance ratio
R
2
/R
1
- 0.8 1.0 1.2 -
Transition frequency
f
T
V
CE
= 10V, I
E
= -5mA,
f = 100MHz
- 250 - MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land.
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
                                                                                        
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© 2015 ROHM Co., Ltd. All rights reserved.
2/7
20151001 - Rev.002