2N3905 & 2N3906
Silicon PNP Transistor
General Purpose
TO92 Type Package
Absolute Maximum Ratings:
Collector−Emitter Voltage, V
CEO
40V......................................................
Collector−Base Voltage, V
CBO
40V.......................................................
Emitter−Base Voltage, V
EBO
5V..........................................................
Continuous Collector Current, I
C
200mA..................................................
Total Device Dissipation (T
A
= +255C), P
D
625mW.........................................
Derate Above 255C 5.0mW/5C.....................................................
Total Device Dissipation (T
A
= +605C), P
D
250mW.........................................
Total Device Dissipation (T
C
= +255C), P
D
1.5W............................................
Derate Above 255C 12mW/5C......................................................
Operating Junction Temperature Range, T
J
−555 to +1505C..................................
Storage Temperature Range, T
stg
−555 to +1505C..........................................
Thermal Resistance, Junction to Case, R
thJC
83.35C/W.....................................
Thermal Resistance, Junction to Ambient, R
thJA
2005C/W...................................
Electrical Characteristics:
(T
A
= +255C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector−Emitter Breakdown Voltage V
(BR)CEO
I
C
= 1mA, I
B
= 0, Note 1 40 − − V
Collector−Base Breakdown Voltage V
(BR)CBO
I
C
= 105 A, I
E
= 0 40 − − V
Emitter−Base Breakdown Voltage V
(BR)EBO
I
E
= 105 A, I
C
= 0 5 − − V
Collector Cutoff Current I
CEX
V
CE
= 30V, V
EB
= 3V − − 50 nA
Base Cutoff Current I
BL
V
CE
= 30V, V
EB
= 3V − − 50 nA
ON Characteristics (Note 1)
DC Current Gain
2N3905
h
FE
V
CE
= 1V, I
C
= 0.1mA
30 − −
2N3906 60 − −
2N3905 V
CE
= 1V, I
C
= 1mA 40 − −
2N3906 80 − −
2N3905 V
CE
= 1V, I
C
= 10mA 50 − 150
2N3906 100 − 300
2N3905 V
CE
= 1V, I
C
= 50mA 30 − −
2N3906 60 − −
2N3905 V
CE
= 1V, I
C
= 100mA 15 − −
2N3906 30 − −
Note 1. Pulse Test: Pulse Width 3 3005 s, Duty Cycle 3 2%.
Electrical Characteristics (Cont’d): (T
A
= +255C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Cont’d) (Note 1)
Collector−Emitter Saturation Voltage V
CE(sat)
I
C
= 10mA, I
B
= 1mA − − 0.25 V
I
C
= 50mA, I
B
= 5mA − − 0.4 V
Base−Emitter Saturation Voltage V
BE(sat)
I
C
= 10mA, I
B
= 1mA 0.65 − 0.85 V
I
C
= 50mA, I
B
= 5mA − − 0.95 V
Small−Signal Characteristics
Current Gain−Bandwidth Product
2N3905
f
T
I
C
= 10mA, V
CE
= 20V, f = 100MHz
200 − − MHz
2N3906 250 − − MHz
Output Capacitance C
obo
V
CB
= 5V, I
E
= 0, f = 1MHz − − 4.5 pF
Input Capacitance C
ibo
V
CB
= 0.5V, I
C
= 0, f = 100kHz − − 10.0 pF
Input Impedance
2N3905
h
ie
I
C
= 1mA, V
CE
= 10V, f = 1kHz
0.5 − 8.0 k3
2N3906 2.0 − 12 k3
Voltage Feedback Ratio
2N3905
h
re
I
C
= 1mA, V
CE
= 10V, f = 1kHz
0.1 − 5.0 x 10
−4
2N3906 0.1 − 10 x 10
−4
Small−Signal Current Gain
2N3905
h
fe
I
C
= 1mA, V
CE
= 10V, f = 1kHz
50
−
200
2N3906 100 − 400
Output Admittance
2N3905
h
oe
I
C
= 1mA, V
CE
= 10V, f = 1kHz
1.0 − 40 5 mhos
2N3906 3.0 − 60 5 mhos
Noise Figure
2N3905
NF
I
C
= 1005 A, V
CE
= 5V, R
S
= 1k3 ,
f = 10Hz to 15.7kHz
− − 5.0 db
2N3906 − − 4.0 db
Switching Characteristics
Delay Time t
d
V
CC
= 3V, V
EB
= 0.5V, I
C
= 10mA,
I
B1
= 1mA
− − 35 ns
Rise Time t
r
− − 35 ns
Storage Time
2N3905
t
s
V
CC
= 3V, I
C
= 10mA,
I
B1
= I
B2
= 1mA
− − 200 ns
2N3906 − − 225 ns
Fall Time
2N3905
t
f
− − 60 ns
2N3906 − − 75 ns
Note 1. Pulse Test: Pulse Width 3 3005 s, Duty Cycle 3 2%.