2009. 5. 28 1/2
SEMICONDUCTOR
TECHNICAL DATA
PF1015UDF16B
ESD/EMI Filter
Revision No : 3
UDFN-16B
MILLIMETERSDIM
2.90 0.10
+
_
J
TOP VIEW
SIDE VIEW
BOTTOM VIEW
A
C
H
G
K
L
J
D
E
F
A
B
0.40
0.02+0.03/-0.02
0.20 Min
0.20
0.50 0.05
+
_
0.40 0.10
+
_
0.20 0.05
+
_
3.30 0.05
+
_
1.35 0.05
+
_
0.25 0.10
+
_
C
G
H
D
E
18
16
9
Pin 1
F
B
L
K
1,16 : Filter channel 1
2,15 : Filter channel 2
3,14 : Filter channel 3
4,13 : Filter channel 4
5,12 : Filter channel 5
6,11 : Filter channel 6
7,10 : Filter channel 7
8,9 : Filter channel 8
GND PAD
ELECTRICAL CHARACTERISTICS (Ta=25℃)
15pF
15pF
100Ω
FILTERn*
FILTERn*
GND
EQUIVALENT CIRCUIT
CHARACTERISTIC SYMBOL RATING UNIT
DC Power Per Resistor
P
R
100
mW
Power Dissipation
*P
D
800
Junction Temperature
T
j
150
℃
Storage Temperature
T
stg
-55～150
℃
* Total Package Power Dissipation
Type Name
Lot No.
T3
A0
MARKING
APPLICATION
・I/O ESD protection for mobile handsets, notebook, PDAs, etc.
・EMI filtering for data ports in cell phones, PDAs, notebook computers
・EMI filtering for LCD, camera and chip-to-chip data lines
FEATURES
・EMI/RFI filtering
・ESD Protection to IEC 61000-4-2 Level 4
・Low insertion loss
・Good attenuation of high frequency signals
・Low clamping voltage
・Low operating and leakage current
・Eight elements in one package
DESCRIPTION
PF1015UDF16B is an EMI filter array with electrostatic discharge (ESD) protection,
which integrates eight pi filters (C-R-C). These parts include ESD protection diodes on
every pin, providing a very high level of protection for sensitive electronic components
that may be subjected to electrostatic discharge.
The PF1015UDF16B provides the recommended line termination while implementing a
low pass filter to limit EMI levels and providing ESD protection which exceeds IEC
61000-4-2 level 4 standard. The UDFN package is a very effective PCB space
occupation and a very thin package (0.4mm Pitch, 0.5mm height)
MAXIMUM RATING (Ta=25℃)
RECOMMENEDED FOOTPRINT
(dimensions in mm)
2.20
0.40
0.30
0.25
0.55
1.66
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Reverse Stand-Off Voltage
V
RWM
- - - 5 V
Reverse Breakdown Voltage
V
BR
I
t
=1mA
6 - - V
Reverse Leakage Current
I
R
V
RWM
=3.3V
- - 1.0
μA
Cutoff Frequency
fc
-3dB
V
Line
=0V, Z
SOURCE
=50Ω, Z
LOAD
=50Ω
- 110 - MHz
Channel Resistance
R
LINE
Between Input and Output 80 100 120
Ω
Line Capacitance
C
LINE
V
Line
=0V DC, 1MHz, Between I/O Pins and GND
36 45 54
pF
V
Line
=2.5V, 1MHz, Between I/O Pins and GND
24 30 36
2009. 5. 28 2/2
PF1015UDF16B
Revision No : 3
DIODE VOLTAGE (V)
0.5
1.5
2.0
0.0
012345
1.0
NORMALIZED CAPACITANCE
DIODE CAPACITANCE vs. INPUT VOLTAGE
90
92
94
96
98
100
102
104
106
108
110
-40-200 20406080
RESISTANCE R (Ω)
R
Line
- TEMPERATURE
AMBIENT TEMPERATURE Ta ( )
C
ANALOG CROSSTALK
CROSSTALK (dB)
-150
-120
1
10 100 1000 6000
FREQUENCY (MHz)
-90
-60
-30
0
S
21
- FREQUENCY
FREQUENCY (MHz)
-20
0
-40
1 10 100 1000 6000
-30
-10
INSERTION LOSS (dB)