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TEL:886-2-22696661
FAX:886-2-22696141
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List
List.................................................................................................
Package outline...............................................................................
Features..........................................................................................
Mechanical data...............................................................................
Maximum ratings .............................................................................
.
Electrical characteristics..................................................................
Rating and characteristic curves........................................................
Pinning information...........................................................................
Marking...........................................................................................
Suggested solder pad layout.............................................................
Packing information..........................................................................
Reel packing....................................................................................
Suggested thermal profiles for soldering processes.............................
High reliability test capabilities...........................................................
Formosa MS
2N7002KW
Document ID Issued Date Revised Date Revision Page.
DS-251127 2009/07/10 2018/07/09
C 9
N-Channel SMD MOSFET ESD Protection
Package outline
Page 2
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Formosa MS
Features
R =3.0 V =10V, @60V/0.50ADS(ON) GSΩ,•
R =4.0 V =4.5V, @60V/0.20ADS(ON) GSΩ,•
•
ESD production 2kV (Human body mode)
Advanced trench process technology
•
High density cell design for ultra low on-resistance•
Specially designed for battery operated system,•
solid-state relays drivers, relays, displays, lamps,
solenoids, memories, etc
In compliance with EU RoHS 2011/65/EU directives
•
•
Suffix "-H" indicates Halogen-free part, ex. 2N7002ΚW-H
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOT-323
Terminals : Solder plated, solderable per
•
MIL-STD-750, Method 2026
Mounting Position : Any
•
•
Weight : Approximated 0.006 gram
60V N-Channel Enhancement
Mode MOSFET - ESD Protection
Parameter
Drain-source voltage
Drain-gate voltage(G = 1.0M
RS Ω)
Drain to current-continue
Total power dissipation
Gate to source voltage-continue
Operation junction temperature range
Symbol
V
DSS
VDGR
PD
TJ
RθJA
MIN.
-55
TYP. MAX.
60
60
120
+150
625
Unit
V
V
°C
°C/W
Maximum ratings (AT T =25 C unless otherwise noted)
A
o
VGS
ID
200
±20
±115
V
mA
mW
Thermal resistance junction to ambient
-pulsed
I
DM
800
2N7002KW
Document ID Issued Date Revised Date Revision Page.
Derate above 25°C
Derate above 75°C
SOT-323
Dimensions in inches and (millimeters)
0.032 (0.80)
0.040 (1.00)
0.054 (1.35)
0.046 (1.15)
0.096 (2.40)
0.080 (2.00)
0.017 (0.42)Min.
0.088 (2.20)
0.072 (1.80)
.056(1.40)
.048(1.20)
0.026 (0.65)Max
0.016 (0.40)
0.012 (0.30)
0.010 (0.25)
0.004 (0.10)
Storage temperature range
TSTG
-55
+150
°C
N-Channel SMD MOSFET ESD Protection
DS-251127 2009/07/10 2018/07/09 C 9