,

O

ne.

20

STERN AVE.

SPRINGFIELD,

NEW

JERSEY

07081

U.S.A.

Silicon

PNP

Power

Transistor

TELEPHONE:

(973)

376-2922

(212)227-6005

FAX: (973)

376-8960

2SB1604

DESCRIPTION

•

High-speed Switching

•

Low

Collector

to

Emitter Saturation Voltage

:

VCE(sat)=

-0.6V(Max.)@lc=

-10A

•

Full-pack Package With Outstanding Insulation,

Which

Can Be

Installed

to The

Heat Sink With

One

Screw

APPLICATIONS

•

Designed

for

low-voltage switching

and

general purpose

applications.

ABSOLUTE

MAXIMUM

RATINGS(Ta=25'C)

SYMBOL

VCBO

Vceo

VEBO

Ic

I

CM

PC

Tj

Tstg

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Collector Power Dissipation

@

Ta=25°C

Collector Power Dissipation

@

Tc=25"C

Junction Temperature

Storage

Temperature Range

VALUE

-40

-20

-5

-10

-20

2

40

150

-55-150

UNIT

V

V

V

A

A

W

W

'C

°c

™

1

2 3

a

K-V9

'

io;;;

oj

i

.

L

H

,

.• , .'. •. , '

- - 0

-

N -

DIM

A

B

C

D

F

H

J

K

L

N

Q

R

S

a

2

•^

3

PIN

1.BASE

2.

COLLECTOR

3.

BETTER

TO-220F

package

-

C -

-S-

*

1

"f

"

r

-

T

i

r

—

~"f

»

;

o

,-••,

<>!

U ;'

<

,

;

-•->'.';

1

A

'

!

i

i

* *

i

* I

v""

t

',

<

:

'

"

R -

..:;;;

K

;

'

J

- -

mm

WIN

MAX

14.95 15.05

10.00 10.10

4.40 4.60

0.75 0.80

3.10 3.30

3.70 3.90

0.50 0.70

13.4

13.6

1.10 1.30

5.00 5.20

2.70 2.90

2.20 2.40

2.65 2.85

6.40

6.60

NJ

Semi-Conductors reserves

the

right

to

change

test

conditions,

parameter

limits

and

package

dimensions without

notice.

Information

furnished

by NJ

Semi-Conductors

is

believed

to be

both

accurate

and

reliable

at the

time

of

going

to

press. However.

NJ

Semi-Conductors assumes

no

responsibility

for any

errors

or

omissions discovered

in its

use.

N.I

Semi-Conductors encourages customers

to

verify

that datasheets

are

current before

placing

orders.

Quality

Semi-Conductors

Silicon

PNP

Power

Transistor

2SB1604

ELECTRICAL

CHARACTERISTICS

TC=25'C

unless otherwise specified

SYMBOL

V(BR)CEO

VcE(sat)

VBE(sat)

ICBO

IEBO

hpE-1

hFE-2

fr

PARAMETER

Collector-Emitter

Breakdown Voltage

Collector-Emitter

Saturation

Voltage

Base-Emitter

Saturation Voltage

Collector

Cutoff

Current

Emitter

Cutoff

Current

DC

Current Gain

DC

Current Gain

Current-Gain

—

Bandwidth

Product

CONDITIONS

lc

=

-10mA,

IB

= 0

lc=-10A;

IB=-0.33A

IC=-10A;IB=-0.33A

VCB=

-40V;

IE=

0

VEB=

-5V;

lc=

0

lc=-0.1A;VCE=-2V

lc=

-3A;

VCE=

-2V

IE=

0.5A;

VCE=

-10V;f=10MHz

MIN

-20

45

90

TYP.

30

MAX

-0.6

-1.5

-50

-50

260

UNIT

V

V

V

uA

uA

MHz

Switching Times

ton

tstg

tf

Turn-on

Time

Storage

Time

Fall Time

lc=-3A;lBi=-lB2=-0.1A,

0.1

0.5

0.1

us

u

s

u

s

•

hpE-2

Classifications

Q

90-180

P

130-260