2015. 5. 12 1/3
SEMICONDUCTOR
TECHNICAL DATA
2N3906SC
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
・Low Leakage Current
: I
CEX
=-50nA(Max.), I
BL
=-50nA(Max.)
@V
CE
=-30V, V
EB
=-3V.
・Excellent DC Current Gain Linearity.
・Low Saturation Voltage
: V
CE(sat)
=-0.4V(Max.) @I
C
=-50mA, I
B
=-5mA.
・Complementary to 2N3904SC.
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-40 V
Collector-Emitter Voltage
V
CEO
-40 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-200 mA
Base Current
I
B
-50 mA
Collector Power Dissipation
P
C
*
350 mW
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
Note : * Package Mounted On 99.5% Alumina 10×8×0.6㎜)
2015. 5. 12 2/3Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25℃)
2N3906SC
* Pulse Test : Pulse Width≦300μS, Duty Cycle≦2%.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CEX
V
CE
=-30V, V
EB
=-3V
- - -50 nA
Collector Cut-off Current
I
CBO
V
CB
=-30V, I
E
=0
- - -100 nA
Emitter Cut-off Current
I
EBO
V
EB
=-3V, I
C
=0
- - -100 nA
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=-10μA, I
E
=0
-40 - - V
Collector-Emitter Breakdown Voltage *
V
(BR)CEO
I
C
=-1mA, I
B
=0
-40 - - V
Emitter-Base Breakdown Voltage *
V
(BR)EBO
I
E
=-10μA, I
C
=0
-5.0 - - V
DC Current Gain *
h
FE
V
CE
=-1V, I
C
=-10mA
150 - 250
Collector-Emitter Saturation Voltage *
V
CE(sat)
I
C
=-50mA, I
B
=-5mA
- - -0.4 V
Base-Emitter Saturation Voltage *
V
BE(sat)
I
C
=-50mA, I
B
=-5mA
- - -0.95 V
Transition Frequency
f
T
V
CE
=-20V, I
C
=-10mA, f=100MHz
250 - - MHz
Switching Time
Delay Time
t
d
- - 35
nS
Rise Time
t
r
- - 35
Storage Time
t
stg
- - 225
Fall Time
t
f
- - 75