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General Purpose Transistors
NPN Silicon
Features
Capable of 225mW power dissipation
•
•
• Epitaxial plana chip construction
• Ideal for medium power application and switching
•
•
•
Moisture sensitivity level: 1
ESD rating – human body model: >4000 V,machine model: >400 V
Lead-free parts meet RoHS requirments
Suffix "-H" indicates Halogen-free part, ex.BC846A-H
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Total device dissipation FR-5 board
(1)
Storage temperature range
Operating junction temperature range
Rating Symbol
V
CBO
V
CEO
V
EBO
P
D
T
J
T
STG
Value
-55
-55
80
65
6.0
+150
+150
UNIT
Vdc
Vdc
Vdc
mW
o
C
o
Maximum ratings (AT T =25 C unless otherwise noted)
A
Junction to ambient
R
θJA
556
O
C/W
Thermal resistance
225
1.8
O
T = 25 C
A
O
Derate above 25 C
Formosa MS
O
mW/ C
1.FR-5 = 1.0 x 0.75 x0.062 in.
2. Aluminum=0.4 x 0.3 x 0.024 in., 99.5% aluminum
BC846
BC847, BC850
BC848, BC849
50
30
45
30
6.0
5.0
Document ID Issued Date Revised Date Revision Page.
Mechanical data
Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOT-23
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Mounting Position : Any
• Weight : Approximated 0.008 gram
•
BC846
BC847, BC850
BC848, BC849
BC846
BC847, BC850
BC848, BC849
Total device dissipation aluminum
substrate(2)
P
D
mW
Junction to ambient
R
JAθ
417
O
C/W
Thermal resistance
300
2.4
O
T = 25 C
A
O
Derate above 25 C
O
mW/ C
Package outline
PARAMETER
Symbol MIN. TYP. MAX. UNIT
Thermal characteristics
Collector current-continuous
I
C
100
mAdc
Rating
SOT-23
Dimensions in inches and (millimeters)
0.035 (0.89)
0.051 (1.30)
0.063 (1.60)
0.047 (1.20)
0.108 (2.75)
0.083 (2.10)
0.027 (0.67)
0.013 (0.32)
(A)
(B)
(C)
0.120 (3.04)
0.110 (2.80)
.084(2.10)
.068(1.70)
0.042 (1.05)
0.034 (0.85)
0.020 (0.50)
0.012 (0.30)
0.007 (0.18)
0.003 (0.09)
o
C
SMD NPN Transistor
BC846A/B-BC847A/B/C
BC849B/C-BC850B/CBC848A/B/C-
DS-231154 2009/08/10 2011/07/21 C 16