SILICON PLANAR
EPITAXIAL NPN TRANSISTOR
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Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number
9960
Issue
1
Page 1 of
3
2N2222AUB
• High Speed Saturated Switching
• Hermetic Surface Mounted Package.
• Ideally suited for High Speed Switching
and General Purpose Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise stated)
V
CBO
Collector – Base Voltage 75V
V
CEO
Collector – Emitter Voltage 50V
V
EBO
Emitter – Base Voltage 6V
I
C
Continuous Collector Current 800mA
P
D
Total Power Dissipation at
T
A
= 25°C
500mW
Derate Above 37.5°C 3.08mW/°C
T
J
Junction Temperature Range -65 to +200°C
T
stg
Storage Temperature Range -65 to +200°C
THERMAL PROPERTIES
(Each Device)
Symbols Parameters Min. Typ. Max. Units
R
θJA
Thermal Resistance, Junction To Ambient 325 °C/W
SILICON PLANAR
EPITAXIAL NPN TRANSISTOR
2N2222AUB
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number
9960
Issue
1
Page 2 of
3
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ Max.
Units
V
(BR)CEO
(1)
Collector-Emitter
Breakdown Voltage
I
C
= 10mA I
B
= 0
50 V
I
CBO
Collector Cut-Off Current
V
CB
= 75V I
E
= 0
10 µA
V
CB
= 60V I
E
= 0
10 nA
T
A
= 150°C
10 µA
I
EBO
Emitter Cut-Off Current
V
EB
= 6V I
C
= 0
10 µA
V
EB
= 4V I
C
= 0
10 nA
I
CES
Collector Cut-Off Current
V
CE
= 50V
50 nA
V
CE(sat)
(1)
Collector-Emitter Saturation
Voltage
I
C
= 150mA I
B
= 15mA
0.3
V
I
C
= 500mA I
B
= 50mA
1.0
V
BE(sat)
(1)
Base-Emitter Saturation
Voltage
I
C
= 150mA I
B
= 15mA
0.6 1.2
I
C
= 500mA I
B
= 50mA
2
h
FE
(1)
Forward-current transfer
ratio
I
C
= 0.1mA V
CE
= 10V
50
I
C
= 1.0mA V
CE
= 10V
75 325
I
C
= 10mA V
CE
= 10V
100
T
A
= -55°C
35
I
C
= 150mA V
CE
= 10V
100 300
I
C
= 500mA V
CE
= 10V
30
DYNAMIC CHARACTERISTICS
| h
fe
|
Small signal forward-current
transfer ratio
I
C
= 20mA V
CE
= 20V
2.5
f = 100MHz
h
fe
Small Signal Current Gain
I
C
= 1.0mA V
CE
= 10V
50
f = 1.0KHz
C
obo
Output Capacitance
V
CB
= 10V I
E
= 0
8
pF
f = 1.0MHz
C
ibo
Input Capacitance
V
EB
= 0.5V I
C
= 0
30
f = 1.0MHz
t
on
Turn-On Time
I
C
= 150mA V
CC
= 30V
35
ns
I
B1
= 15mA
t
off
Turn-Off Time
I
C
= 150mA V
CC
= 30V
300
I
B1
= - I
B2
= 15mA
Notes
NotesNotes
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%