SILICON SWITCHING
NPN TRANSISTOR
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Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number
9959
Issue
1
Page 1 of
3
2N2222AUA
• High Speed Saturated Switching
• Hermetic LCC3 Ceramic package.
• MIL-PRF-19500/255 outline
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise stated)
V
CBO
Collector – Base Voltage 75V
V
CEO
Collector – Emitter Voltage 50V
V
EBO
Emitter – Base Voltage 6V
I
C
Continuous Collector Current 0.8A
P
D
Total Power Dissipation at
T
A
= 25°C
500mW
Derate Above 25°C 2.86mW/°C
T
J
Junction Temperature Range -65 to +200°C
T
stg
Storage Temperature Range -65 to +200°C
THERMAL PROPERTIES
Symbols Parameters Max. Units
R
θJA
(1)
Thermal Resistance, Junction To Ambient 325 °C/W
R
θJSP(IS)
(2)
Thermal Resistance Junction to Solder Pads 110 °C/W
(1)
For non-thermal conductive PCB or unknown PCB surface mount conditions in free air.
(2)
Infinite sink mount to PCB.
SILICON SWITCHING
NPN TRANSISTOR
2N2222AUA
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number
9959
Issue
1
Page 2 of
3
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ. Max.
Units
V
(BR)CEO
(1)
Collector-Emitter
Sustaining Voltage
I
C
= 10mA I
B
= 0
50 V
I
CES
Collector-Emitter
Cut-Off Current
V
CE
= 50V
50 nA
I
CBO
Collector-Base
Cut-Off Current
I
E
= 0 V
CB
= 75V
10 µA
I
E
= 0 V
CB
= 60V
10 nA
T
A
= 150°C
10 µA
I
EBO
Emitter Cut-Off Current
I
C
= 0 V
EB
= 4V
10 nA
V
EB
= 6V
10 µA
ON CHARACTERISTICS
V
CE(Sat)
(1)
Collector-Emitter
Saturation Voltage
I
C
= 150mA I
B
= 15mA
0.3
V
I
C
= 500mA I
B
= 50mA
1.0
V
BE(Sat)
(1)
Base-Emitter
Saturation Voltage
I
C
= 150mA I
B
= 15mA
0.6 1.2
V
I
C
= 500mA I
B
= 50mA
2.0
h
FE
DC Current Gain
I
C
= 0.1mA V
CE
= 10V
50
-
I
C
= 1.0mA V
CE
= 10V
75 325
I
C
= 10mA V
CE
= 10V
100
T
A
= -55°C
35
I
C
= 150mA V
CE
= 10V
(1)
100 300
I
C
= 500mA V
CE
= 10V
(1)
30
SMALL SIGNAL CHARACTERISTICS
C
obo
Output Capacitance
V
CB
= 10V I
E
= 0
f = 1.0MHz 8
pF
C
ibo
Input Capacitance
V
EB
= 0.5V I
C
= 0
f = 1.0MHz 25
|h
fe
|
Magnitude of small-
signal, short-circuit
forward current transfer
ratio
I
C
= 20mA V
CE
= 20V
f = 100MHz 2.5
-
h
fe
Small Signal Current
Gain
I
C
= 1.0mA V
CE
= 10V
f = 1.0kHz 50
-
Notes
NotesNotes
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%