T4-LDS-0040, Rev. 4 (6/4/13) ©2013 Microsemi Corporation Page 1 of 7
1N5711-1, 1N5712-1, 1N685 7-1, and
1N6858-1; DSB2810 and DSB5712
Available on
commercial
versions
Schot t ky Barrier Diode
Qualified per MIL-PRF-19500/444
Quali f i ed Lev els:
JAN , JANTX, and
JANTXV
DESCRIPTION
This Schottky barrier diode is metallurgically bonded and offe r s military g r ade qualifications
for high-reliability app lic at ion s on “1N” prefixed numbers. This small d iode is hermetically
seal ed and bonded into a DO-35 glass p ackage.
DO-35 (DO-204AH)
Package
A lso a vailable in:
UB package
(3-pin surf ac e mo unt)
1N5711UB, 1N57 12U B
(B, CC, CA)
DO-213AA package
(s urf ace mount )
1N5711UR-1, 1N5712UR-1,
1N6857UR-1, and
1N6858UR-1
Important: For the latest information, vis it our website http://www.microsemi.com.
FEATURES
• JEDE C registered 1N5711-1, 1N5712-1, 1N6857-1, and 1N6858-1 numbers.
• Metall urgic ally bonded.
• JAN, JANTX, J ANTXV and com mercial qualific ations also available per MIL-PRF-19500/444 on
“1N” numbers only.
(See Part Nomenclature for all available options).
• RoHS compliant versions avail able (commercial grade only).
APPLICATI ONS / BE NEFITS
• Low reverse leakage characteristics.
• Small size for high density mounting using flexible thru-hole leads (see package illustration).
• ESD s ensitive to Class 1.
MAXIMUM RATIN GS @ 25 ºC unless other wis e stated
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage T emperature
T
J
and T
STG
-65 to +150
ºC
Thermal Resistance, Junction-to-Lead
@ lead length = 0.375 inch (9.52 mm) from body
R
ӨJL
250
ºC/W
Average Rectified Output Current:
1N5711
(1)
DSB2810, DSB5712, 1N5712 & 1N6858
(2)
1N6857
(3)
I
O
33
75
150
mA
Solder Temperature @ 10 s
260
o
C
NOTES: 1. At T
L
= +130°C and L = 0.375 inch, derate I
O
to 0 at +150°C.
2. At T
L
= +110°C and L = 0.375 inch, derate I
O
to 0 at +150°C.
3. At T
L
= +70°C and L = 0.375 inch, derate I
O
to 0 at +150°C.
T4-LDS-0040, Rev. 4 (6/4/13) ©2013 Microsemi Corporation Page 2 of 7
1N5711-1, 1N5712-1, 1N685 7-1, and
1N6858-1; DSB2810 and DSB5712
M ECHANI CAL and PACKAGING
• CASE: Hermetically sealed glass package.
• TERMINALS: Tin/lead plated or RoHS compliant matte-tin (on commercial grade only ) over copper clad steel. Solderable per
MIL-STD-750, method 2026.
• POLARITY: Cathode indicated by band.
• MARKING: Part number.
• TAPE & REEL option: S tandard per EIA-296. Consult factory for quantities.
• WEIGHT: Approximately 0.2 grams.
• See Package Dimensions on last page.
PART NOME NCL ATURE
JAN 1N5711 -1 (e3)
Reliability Level
JAN = JAN lev el
JANTX = JANTX level
JANTXV = JANTXV level
CDS (reference JANS)*
Blank = Commercial grade
*Av a ilab le on ly on 1N 5 711 -1
JEDEC type number
(see Electrical Characteristics
table)
RoHS Compliance
e3 = RoHS compliant (on
commercial grade only )
Blank = non-RoHS compliant
Metallurgically Bonded
DSB 2810 (e3)
Diode Schottky Barrier
Series number
(see Electrical Characteristics
table)
RoHS Compliance
e3 = RoHS compliant
Blank = non-RoHS compliant
SYMBOLS & DEFI NITIONS
Symbol
Definition
C
Capacitance: The capacitance in pF at a frequency of 1 MHz and speci fied voltage.
f
frequency
I
R
Reverse Current: The dc current fl owing from the external circuit into the cathode terminal at the specified voltage V
R
.
I
O
Average Rectified Output Current: The Output Current averaged over a full cycle with a 50 Hz or 60 Hz sin e-wave
input and a 180 degree conduction angle.
t
rr
Reverse Recovery Time: The time interval between the instant the current passes through zero when changi ng from
the forward direction to the reverse direction and a specifi ed decay point after a peak reverse current occurs.
V
(BR)
Breakdown Voltage: A voltage in the breakdown region.
V
F
Forward Voltage: A positive dc anode-cathode voltage the device will exhibit at a specified forward current.
V
R
Reverse Voltage: A positive dc cathode-anode voltage below the breakdown region.
V
RWM
Working Peak Reverse Voltage: The peak voltage excluding all transient voltages (ref JESD282-B). Also sometimes
known historically as PIV.