- Wide zener voltage range selection: 2.4V to 75V
- VZ Tolerance Selection of ±5%
- Hermetically sealed glasss
- Moisture sensitivity level 1
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate
- Pb free and RoHS compliant
- High reliability glass passivation insuring parameter
stability and protection against junction contamination
- Case: Mini-MELF Package (JEDEC DO-213AC)
- High temperature soldering guaranteed: 270
o
C/10s
- Polarity: Indicated by cathode band
SYMBO UNIT
P
D
mW
V
F
V
R
θJA
o
C/W
T
J
, T
STG
o
C
Note1: Valid provided that electrodes are kept at ambient temperature
Zener I vs. V Character istics
V
BR
: Voltage at I
ZK
I
ZK
: Test current for voltage V
BR
Z
ZK
: Dynamic impedance at I
ZK
I
ZT
: Test current for voltage V
Z
V
Z
: Voltage at current I
ZT
Z
ZT
: Dynamic impedance at I
ZT
I
ZM
: Maximum steady state current
V
ZM
: Voltage at I
ZM
Document Number: DS_S1408008 Version: F14
Mini-MELF (LL34)
Hermetically Sealed Glass
MECHANICAL DATA
- Weight: 31 mg (approximately)
BZV55C2V4 thru BZV55C75
Taiwan Semiconductor
Small Si gnal Product
5% Tolerance SMD Zener Diode
FEATURES
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25℃ unless otherwise noted)
PARAMETER VALUE
Power Dissipation 500
Forward Voltage
I
F
= 10 mA
1
Thermal Resistance (Junction to Ambient) (Note 1) 300
Junction and Storage Temperature Range - 65 to +175
ELECTRICAL CHARACTERISTICS ( T
A
= 25
o
C unless otherwise noted )
Min Nom Max
BZV55C2V4 2.28 2.4 2.56 5 85 1.0 600 50 1.0
BZV55C2V7 2.51 2.7 2.89 5 85 1.0 600 10 1.0
BZV55C3V0 2.8 3.0 3.2 5 85 1.0 600 4 1.0
BZV55C3V3 3.1 3.3 3.5 5 85 1.0 600 2 1.0
BZV55C3V6 3.4 3.6 3.8 5 85 1.0 600 2 1.0
BZV55C3V9 3.7 3.9 4.1 5 85 1.0 600 2 1.0
BZV55C4V3 4.0 4.3 4.6 5 75 1.0 600 1 1.0
BZV55C4V7 4.4 4.7 5.0 5 60 1.0 600 0.5 1.0
BZV55C5V1 4.8 5.1 5.4 5 35 1.0 550 0.1 1.0
BZV55C5V6 5.2 5.6 6.0 5 25 1.0 450 0.1 1.0
BZV55C6V2 5.8 6.2 6.6 5 10 1.0 200 0.1 2.0
BZV55C6V8 6.4 6.8 7.2 5 8 1.0 150 0.1 3.0
BZV55C7V5 7.0 7.5 7.9 5 7 1.0 50 0.1 5.0
BZV55C8V2 7.7 8.2 8.7 5 7 1.0 50 0.1 6.2
BZV55C9V1 8.5 9.1 9.6 5 10 1.0 50 0.1 6.8
BZV55C10 9.4 10 10.6 5 15 1.0 70 0.1 7.5
BZV55C11 10.4 11 11.6 5 20 1.0 70 0.1 8.2
BZV55C12 11.4 12 12.7 5 20 1.0 90 0.1 9.1
BZV55C13 12.4 13 14.1 5 26 1.0 110 0.1 10
BZV55C15 13.8 15 15.6 5 30 1.0 110 0.1 11
BZV55C16 15.3 16 17.1 5 40 1.0 170 0.1 12
BZV55C18 16.8 18 19.1 5 50 1.0 170 0.1 13
BZV55C20 18.8 20 21.1 5 55 1.0 220 0.1 15
BZV55C22 20.8 22 23.3 5 55 1.0 220 0.1 16
BZV55C24 22.8 24 25.6 5 80 1.0 220 0.1 18
BZV55C27 25.1 27 28.9 5 80 1.0 220 0.1 20
BZV55C30 28 30 32 5 80 1.0 220 0.1 22
BZV55C33 31 33 35 5 80 1.0 220 0.1 24
BZV55C36 34 36 38 5 80 1.0 220 0.1 27
BZV55C39 37 39 41 2.5 90 0.5 500 0.1 28
BZV55C43 40 43 46 2.5 90 0.5 600 0.1 32
BZV55C47 44 47 50 2.5 110 0.5 700 0.1 35
BZV55C51 48 51 54 2.5 125 0.5 700 0.1 38
BZV55C56 52 56 60 2.5 135 0.5 1,000 0.1 42
BZV55C62 58 62 66 2.5 150 0.5 1,000 0.1 47
BZV55C68 64 68 72 2.5 160 0.5 1,000 0.1 51
BZV55C75 70 75 80 2.5 170 0.5 1,000 0.1 56
Notes： 1. The zener Voltage (V
Z
) is tested under pulse condition of 10ms.
2. The device numbers listed have a standard tolerance on the nomial zener voltage of ±5%.
3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages
shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative.
4. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an
rms value equal to 10% of the dc zener current(I
ZT
or I
ZK
) is superimposed to I
ZT
or I
ZK
.
Document Number: DS_S1408008 Version: F14
I
R
@ V
R
(uA)
Max
BZV55C2V4 thru BZV55C75
Taiwan Semiconductor
Small Signal
Part Number
V
Z
@ I
ZT
(Volt)
I
ZT
(mA)
V
R
(V)
Z
ZT
@ I
ZT
(Ω)
Max
I
ZK
(mA)
Z
ZK
@ I
ZK
(Ω)
Max