Any changing of specification will not be informed individual
MMDT5401
Plastic-Encapsulate
Multi-Chip (PNP+PNP) Transistor
RoHS Compliant Product
http://www.SeCoSGmbH.com
Elektronische Bauelemente
Features
Marking : K4M
01-Jan-2006 Rev.B
Page 1 of 2
SOT-363
Dimensions in inches and (millimeters)
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.055(1.40)
.047(1.20)
.026TYP
(0.65TYP)
.096(2.45)
.085(2.15)
.021REF
(0.525)REF
.018(0.46)
.010(0.26)
.006(0.15)
.003(0.08)
.053(1.35)
.045(1.15)
.043(1.10)
.035(0.90)
.039(1.00)
.035(0.90)
.004(0.10)
.000(0.00)
8
o
o
0
ELECTRICAL CHARACTERISTICS (Tamb=25 C unless other wise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
o
Collector-base breakdown voltage
V
(BR)CBO
I
C
=-100µA,
I
E
=0
-160
V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
= -1mA , I
B
=0
-150
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=-10µA,
C
=0
-5
V
Collector cut-off current
I
CBO
V
CB
=-120 V , I
E
=0 -0.05 µA
Emitter cut-off current
I
EBO
V
EB
=-3V , I
C
=0 -0.05 µA
h
FE(1)
V
CE
=-5 V, I
C
= -1mA 50
h
FE(2)
V
CE
=-5 V, I
C
= -10mA 60
240
DC current gain
h
FE(3)
V
CE
=-5 V, I
C
= -50mA 50
V
CE(sat)1
I
C
=-10 mA, I
B
=-1mA -0.2 V
Collector-emitter saturation voltage
V
CE(sat)2
I
C
=-50 mA, I
B
=-5mA -0.5 V
V
BE(sat)1
I
C
= -10 mA, I
B
=-1mA -1 V
Base-emitter saturation voltage
V
BE(sat)2
I
C
= -50 mA, I
B
=-5mA -1 V
Transition frequency
f
T
V
CE
= -10V, I
C
= -10mA,
f = 100MHz
100 300
MHz
Output Capacitance
C
ob
V
CB
=-10V, I
E
= 0 ,
f=1MHz
6
pF
Noise Figure
NF
CE
= -5.0V, I
C
= -200µA,
R
S
= 10 ,f = 1.0kHz
8.0
dB
V
I
Ω
Absolute Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Dissipation
Operating Junction and Storage Temperature Range
A
V
V
W
V
IC
C
VCBO
VCEO
PC
Tj, Tstg
-160
-5
-0.2
-150
0.2
-55~+150
Parameter Symbol Ratings Unit
o
VEBO
(Tamb=25 C unless other wise specified)
o
* Epitaxial Planar Die Construction
* Complementary NPN Type Available (MMDT5551)
E
2
B
2
E
1
C
2
B
1
C
1
