© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 1
1 Publication Order Number:
MBR20100CT/D
MBR2080CTG,
MBR2090CTG,
MBR20100CTG
Switch-mode
Power Rectifiers
This series uses the Schottky Barrier principle with a platinum
barrier metal. These state−of−the−art devices have the following
features:
Features
• 20 A Total (10 A Per Diode Leg)
• Guard−Ring for Stress Protection
• Low Forward Voltage
• 175°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Low Power Loss/High Efficiency
• High Surge Capacity
• Low Stored Charge Majority Carrier Conduction
• Shipped 50 units per plastic tube
• These Devices are Pb−Free and are RoHS Compliant*
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO−220
CASE 221A
STYLE 6
3
4
1
SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
80−100 VOLTS
1
3
2, 4
2
MARKING DIAGRAM
AY WW
B20x0G
AKA
A = Assembly Location
Y = Year
WW = Work Week
B20x0 = Device Code
x = 8, 9 or 10
G = Pb−Free Device
AKA = Polarity Designator
www.onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
MBR2080CTG, MBR2090CTG, MBR20100CTG
www.onsemi.com
2
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbo
l
MBR
Unit
2080CT 2090CT 20100CT
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
80 90 100 V
Average Rectified Forward Current
(Rated V
R
) T
C
= 133°C
I
F(AV)
10 A
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz) T
C
= 133°C
I
FRM
20 A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave,
single phase, 60 Hz)
I
FSM
150 A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
I
RRM
0.5 A
Operating Junction Temperature (Note 1) T
J
*65 to +175 °C
Storage Temperature T
stg
*65 to +175 °C
Voltage Rate of Change (Rated V
R
) dv/dt 10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be af fected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
q
JA
.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Thermal Resistance Junction−to−Case
Junction���to−Ambient
R
q
JC
R
q
JA
2.0
60
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Characteristic
Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 10 Amps, T
C
= 125°C)
(i
F
= 10 Amps, T
C
= 25°C)
(i
F
= 20 Amps, T
C
= 125°C)
(i
F
= 20 Amps, T
C
= 25°C)
v
F
0.75
0.85
0.85
0.95
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T
C
= 125°C)
(Rated dc Voltage, T
C
= 25°C)
i
R
6.0
0.1
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
ORDERING INFORMATION
Device Package Shipping
MBR2080CTG TO−220
(Pb−Free)
50 Units / Rail
MBR2090CTG TO−220
(Pb−Free)
50 Units / Rail
MBR20100CTG TO−220
(Pb−Free)
50 Units / Rail