T4-LDS-0168-1, Rev. 1 (120776) ©2012 Microsemi Corporation Page 1 of 5
1N5807US, 1N58 0 9 US, 1N5811US and URS
Available on
commercial
versions
VOID-LESS HERM E TICALL Y SEALED ULTRAFAS T
RECOVERY GLASS RECTIF I ERS
Qualified per MIL-PRF-19500/477
Quali f i ed Lev els:
JAN, JANT X,
JANTX V and JANS
DESCRIPTION
This “Ultrafast Recovery” rectifier diode series is military qualified and is ideal for high-reliability
applications where a failure cannot be tolerated. The industry-recognized 6.0 amp rated rec tifiers
with working peak reverse voltages from 50 t o 150 vol ts ar e h er m e t i cal ly sealed wi th v oi d -le ss glass
construction using an internal “Category 1” metallurgical bond. These devices are available in both
surface mount MELF and leaded p ac k age c o nfi g urations. Mi c r osem i al s o o ffer s numerou s ot her
rectifier products to meet higher and lower current ratings with various recovery time requirements
including standard, fast and ultrafast device types in both through-hole and surface mount
packages.
“B” MEL F
Package (US)
“B” MEL F
Package ( URS )
Also available in:
“B” Package
(axial-leaded)
1N5807, 09 and 11
Important: For the latest information, vis it our web site http://www.microsemi.com.
FEATURES
• JEDE C registered surface mount equivalent of 1N5807, 1N5809, 1N5811 series.
• Void-l ess hermetically sealed glass package.
• Quadruple-layer passivation.
• Extremely robust construction.
• Internal “Category 1” metallurgical bonds.
• JAN, JANTX, JANTXV and JANS qualifications are available per M IL-PRF-19500/477.
• RoHS compliant versions available (commerci al grade only).
APPL ICAT IONS / BENEFITS
• Ultrafast recovery 6 amp rectifier series from 50 to 150 V.
• Military, space and other high-reliabil ity applications.
• Switching power s upplies or other applications requiring extremely fast switching & low forward
loss.
• High forward surge current capability.
• Low thermal resistance.
• Controlled avalanche with peak reverse power capability.
• Inherently radiation hard as described in Microsemi MicroNote 050.
MAXIMUM RATINGS @ T
A
= 25
o
C unless other wise spe cified
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
T
J
and T
STG
-65 to +175
o
C
Thermal Resistance Junction-to-End Cap Figure 1
R
ӨJEC
6.5
o
C/W
Thermal Resistance
R
ӨJX
52
o
C/W
Working Peak Reverse Voltage:
1N5807
1N5809
1N5811
V
RWM
50
100
150
V
Forward Surge Current
(3)
I
FSM
125
A
Average Rectified Output Current
@ T
L
= +75
o
C at 3/8 inch lead length
(1)
I
O1
6.0 A
Average Rectified Output-Current
@ T
A
= +55
o
C at 3/8 inch lead length
(2)
I
O2
3.0 A
Capacitance @ V
R
= 10 V, f = 1 MHz; Vsig = 50 mV (p-p)
C
J
60
pF
Reverse Recovery Time
(4)
t
rr
30
ns
Solder Temperature @ 10 s
T
SP
260
o
C
Notes: 1. I
O1
is rated at T
EC
= 75 °C. Derate at 60 mA/ºC for T
EC
above 75 ºC.
2. I
O2
is derated at 25 mA/ºC above T
A
= 55
o
C for PC boards where thermal resistance from mounting
po int to ambie nt is s uff i ci ent ly co nt ro lled w here T
J(ma x)
175
o
C is not exc eeded.
3. T
A
= 25
o
C @ I
O
= 3.0 A and V
RWM
for ten 8.3 ms surges at 1 minute inter vals.
4. I
F
= 1.0 A, I
RM
= 1.0 A, I
R(REC)
= .0.10 A and di/dt = 100 A/µs min.
T4-LDS-0168-1, Rev. 1 (120776) ©2012 Microsemi Corporation Page 2 of 5
1N5807US, 1N58 0 9 US, 1N5811US and URS
M ECHANI CAL and PACKAGING
• CASE: Hermetically sealed void-less hard gla ss with tungsten slugs.
• TERMINALS: Tin/lead (Sn/Pb) or RoHS compliant matte/tin (commercial grade only) over nickel plate ov er copper.
• MARKING: Body coated in blue with part number.
• POLARITY: Cathode indicated by band.
• TAPE & REEL option: Standard per EIA-296. Consult factory for quantities.
• WEIGHT: 539 milligrams.
• See
Package Dimensions on last page.
PART NOME NCLAT URE
JAN 1N5807 US (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = Commercial
JEDEC type number
(See Electrical Characteristics
table)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Surface mount Package Type
US = 2 Square end caps
URS = 1 Square + 1 Round end
cap
SYMBOLS & DE FINITI ONS
Symbol
Definition
V
BR
Minimum Breakdown Voltage: The m inimum voltage the devi ce will exhi bit at a specified current.
V
RWM
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature
range.
I
O
Average Rectified Output Current: Output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave i nput and
a 180 degree conduction angle.
V
F
Maximum Forward Voltage: The maximum forward vol tage the device will exhibit at a specified current.
I
R
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature.
C
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage.
t
rr
Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from
the forward direction to the reverse direction and a specified recovery decay point after a peak reverse current occurs.
ELECTRICAL CHARACTERISTICS @ T
A
= 25 ºC unles s otherwise stated
BREAKDOWN
VOLTAGE
(MIN.)
@ 100
µ
A
V
(BR)
MAXIMUM FORWARD
VOLTAGE
@ 4 A (8 .3 ms pulse )
V
FM
REVERSE
CURRENT
(MAX.)
@ V
RWM
I
R
SURGE
CURRENT
(MAX)
I
FSM
(Note 1)
REVERSE
RECOVERY
T IME ( MAX)
t
rr
(Note 2)
TYPE
Volts
Volts
µA
Amps
ns
25
o
C
125
o
C
25
o
C
125
o
C
1N5807
60
0.875
0.800
5
525
125
30
1N5809
110
0.875
0.800
5
525
125
30
1N5811
160
0.875
0.800
5
525
125
30
NOTES: 1. T
A
= 25
o
C @ I
O
= 3.0 A and V
RWM
for ten 8.3 ms surges at 1 minute intervals.
2. I
F
= 1.0 A, I
RM
= 1.0 A, I
R(REC)
= 0.10 A and di/dt = 100 A/µs min.