140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS1003
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
RF & MICROWAVE TRANSISTORS
VHF MOBILE APPLICATIONS
DESCRIPTION:DESCRIPTION:
The MS1003 is a 12.5 V Class C epitaxial silicon NPN transistor
designed primarily for VHF, FM communications. Diffused
emitter resistors provide high VSWR capability under rated
operating conditions. Internal impedance matching ensures
optimum power gain and efficiency over the 136-175 MHz band.
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage 36 V
V
CEO
Collector-Emitter Voltage 18 V
V
CES
Collector-Emitter Voltage 36 V
V
EBO
Emitter-Base Voltage 4.0 V
I
C
Device Current 20 A
P
DISS
Power Dissipation 270 W
T
J
Junction Temperature +200
°°C
T
STG
Storage Temperature -65 to +150
°°C
Thermal DataThermal Data
R
TH(J-C)
Junction-case Thermal Resistance
0.65
°°C/W
Features
• 175 MHz
• 12.5 VOLTS
• P
OUT
= 100 WATTS
• G
P
= 6.0 dB MINIMUM
• COMMON EMITTER CONFIGURATION
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS1003
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25°° C)C)
STATICSTATIC
Value
Symbol Test Conditions
Min.
Typ.
Max.
Unit
BV
CBO
I
C
= 50mA I
E
= 0mA 36 --- ---
V
BV
CES
I
C
= 100mA V
BE
= 0V 36 --- --- V
BV
CEO
I
C
= 100mA I
B
= 0mA 18 --- --- V
BV
EBO
I
E
= 10mA I
C
= 0mA 4.0 --- --- V
I
CES
V
CE
= 15V I
E
= 0mA --- --- 15
mA
h
FE
V
CE
= 5V I
C
= 5A 10 --- 100 ---
DYNAMIC DYNAMIC
Value
Symbol Test Conditions
Min.
Typ.
Max.
Unit
P
OUT
f =175 MHz P
IN
= 25 W V
CC
=12.5V 100 --- --- W
G
P
f =175 MHz P
IN
= 25 W V
CC
=12.5V 6.0 --- ---
dB
C
OB
f = 1 MHz V
CB
= 12.5 V --- --- 390 pF
IIMPEDANCE DATAMPEDANCE DATA
FREQ
Z
IN
(Ω)Ω) Z
CL
(Ω)Ω)
175 MHz 1.5 - j0.9 0.5 - j1.0