Any changing of specification will not be informed individual
MMBD914
Surface Mount Switching Diode
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V
R
100 Vdc
Forward Current I
F
200 mAdc
Peak Forward Surge Current I
FM(surge)
500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
(1)
T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient
R
JA
556 °C/W
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient
R
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
–55 to +150 °C
DEVICE MARKING
MMBD914 = 5D
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
R
= 100 Adc)
V
(BR)
100 — Vdc
Reverse V oltage Leakage Current
(V
R
= 20 Vdc)
(V
R
= 75 Vdc)
I
R
—
—
25
5.0
nAdc
Adc
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
C
T
— 4.0 pF
Forward Voltage
(I
F
= 10 mAdc)
V
F
— 1.0 Vdc
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc) (Figure 1)
t
rr
— 4.0 ns
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
FEATURES
·
Fast Switching Speed
·
Surface Mount Package Ideally Suited for
Automatic Insertion
·
For General Purpose Switching Applications
·
High Conductance
1
ANODE
3
CATHODE
K
J
C
H
L
A
B
S
GV
3
1
2
D
Top View
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
SOT-23
1
2
3
http://www.SeCoSGmbH.com
Ele ktroni sche Bauelemente
01-Jun-2002 Rev. A
Page 1 of 2
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
Any changing of specification will not be informed individual
MMBD914
Surface Mount Switching Diode
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes: 3. t
p
» t
rr
+10 V
2.0 k
820
Ω
0.1
µ
F
DUT
V
R
100
µ
H
0.1
µ
F
50
Ω
Output
Pulse
Generator
50
Ω
Input
Sampling
Oscilloscopes
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
I
R(REC)
= 1.0 mA
Output Pulse
(I
F
= I
R
= 10 mA; Measured
at I
R(REC)
= 1.0 mA)
I
F
Input Signal
Figure 1. Recovery Time Equivalent Test Circuit
Figure 2. Forward Voltage
V
F
, Forward Voltage (V)
1.0
10
100
0.1
Figure 3. Leakage Current
V
R
, Reverse Voltage (V)
10
0
1.0
0.1
0.001
0.01
10 20 30 40 50
I
1.01.20.2 0.4 0.6 0.8
Figure 4. Capacitance
V
R
, Reverse Voltage (V)
0
C
0.68
0.64
0.60
0.52
0.56
2.0 4.0 6.0 8.0
, Forward Current (mA)
F
T
A
= 85
°
C
T
A
= –40
°
C
T
A
= 25
°
C
, Diode Capacitance (pF)
D
T
A
= 25
°
C
T
A
= 55
°
C
T
A
= 85
°
C
T
A
= 150
°
C
T
A
= 125
°
C
I
R
, Reverse Current (
µ
A)
http://www.SeCoSGmbH.com
Elektronische Bauelemente
01-Jun-2002 Rev. A
Page 2 of 2