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Collector-Base Voltage 25 V
9
&(2
Collector-Emitter Voltage 18 V
9
(%2
Emitter-Base Voltage 4 V
,
&
Collector Current -Continuous 0.05
A
3
'
Collector Power Dissipation 400
mW
T
M
Junction Temperature 1
VWJ
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Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage
V
(BR)CBO
25 V
Collector-emitter b
reakdown voltage
V
(BR)CEO
I
C
=0.1mA,I
B
=0 18 V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=100A,I
C
=0 4 V
Collector cut-off current
I
CBO
V
CB
=20V,I
E
=0 0.1 nA
Collector cut-off current
I
CEO
V
CE
=15V,I
B
=0 0.1 A
Emitter cut-off current
I
EBO
EB
V=3V,
C
I=0
0.1 A
DC current gain
h
FE
V
CE
=5V, I
C
=1mA
28 270
Collector-emitter saturation voltage
V
CE(sat)
I
C
=10mA,I
B
=1mA V
Base-emitter saturation voltage
V
BE(sat)
I
C
=10mA,I
B
=1mA 1.42 V
Transition frequency
f
T
V =5V
CE
,I
C
=50mA,f=400MHz
800 MHz
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5
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5
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0 25 50 75 100 125 150
0.0
0.1
0.2
0.3
0.4
0.5
11
0
0.01
0.1
0.1
110
0.4
0.6
0.8
1.0
11
0
0
40
80
120
160
110
200
400
600
800
1000
1200
1
0.1
1
10
0.2 0.4 0.6 0.8 1.0 1.2
0.1
1
10
02
46810
0
2
4
6
8
10
P
C
—— T
a
COLLECTOR POWER DISSIPATION
P
C
(W)
AMBIENT T
EMPERATURE T
a
( )
ć
=10
V
C
Esat
—
— I
C
T
a
=25
ć
T
a
=100
ć
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsa
t
(V)
COLLECTOR CURRENT I
C
(m
A)
0.3
=10
I
C
V
B
Esat
——
T
a
=100
ć
T
a
=25
ć
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
COLLECTOR CURRENT I
C
(mA)
5050
COM
MON EMITTER
V
CE
=5V
T
a
=25
ć
T
a
=100
ć
I
C
h
FE
——
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I
C
(m
A)
50
10
20
3
V
CE
=5V
T
a
=25
ć
20
I
C
f
T
—
—
TRANSITION FREQUENCY f
T
(MHz)
COLLECTOR CURRENT I
C
(mA)
f=1MHz
I
E
=0 / I
C
=0
T
a
=25
ć
V
CB
/ V
EB
C
ob
/ C
ib
——
C
ob
C
ib
CAPACITANCE C (pF)
REVERSE VOLTAGE V (V)
I
C
——
COM
M
O
N EMITTER
V
CE
=5V
COLLECTOR CURRENT I
C
(mA)
BASE-EMITTER VOLTAGE V
BE
(V)
T
a
=100
ć
T
a
=25
ć
V
BE
C
OMMON
EMITTER
T
a
=25
ć
COLLECTOR CURRENT I
C
(mA)
COLLECTOR-EM
ITTER VOLTAGE V
CE
(V)
I
B
=10uA
Static Characteristic
100uA
90uA
80uA
70uA
60uA
50uA
40uA
30uA
20uA
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