SOD-323
FEATURES
z
Fast Switching Speed
z
Surface Mount Package Ideally Suited for Automatic Insertion
z
For General Purpose Switching Applications
z
High Co
nduc
t
ance
Maximum Ratings and Electrical Characteristics, Single Diode @T
a
=25℃
Parameter Symbol Limit Unit
Non-Repetitive Peak Reverse Voltage
V
RM
100 V
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
100 V
RMS Reverse Voltage
V
R(RMS)
71 V
Forward Continuous Current
I
FM
300 mA
Average Rectified Output Current
I
O
150 mA
Forward Surge Current @t=8.3ms
I
FSM
2.0
A
Power Dissipation
Pd
200 mW
Thermal Resistance from Junction
to Ambient
R
θJA
625
℃/W
Junction Temperature
T
j
150
℃
Storage Temperature
T
STG
-55~+150
℃
Non-Repetitive Peak
1N4148WS
SOD-323 Plastic-Encapsulate Diodes
１
CAUTI ON: These devices are sensiti ve to electrostatic discharge; f ollow proper IC Handling Procedures.
(and designs) are registered trademarks of SUM Semiconductor Corporation.
Copyright SUM Semiconduct or Corporation. A l l Rights Reserved.
All other trademarks mentioned are the property of thei r respecti ve owners.
ELECTRICAL CHARACTERISTICS
Electrical Ratings @Ta=25℃
Parameter
Symbol Min Typ Max Unit Conditions
V
F1
0.715 V I
F
=1mA
V
F2
0.855 V I
F
=10mA
V
F3
1.0 V I
F
=50mA
Forward voltage
V
F4
1.25 V I
F
=150mA
I
R1
1 μA V
R
=75V
Reverse current
I
R2
25 nA V
R
=20V
Capacitance between terminals
C
T
2 pF V
R
=0V,f=1MHz
Reverse recovery time
t
rr
4
ns
I
F
=I
R
=10mA
Irr=0.1XI
R
,R
L
=100Ω
1N4148WS
2
CAUTI ON: These devices are sensiti ve to electrostatic discharge; f ollow proper IC Handling Procedures.
(and designs) are registered trademarks of SUM Semiconductor Corporation.
Copyright SUM Semiconduct or Corporation. A l l Rights Reserved.
All other trademarks mentioned are the property of thei r respecti ve owners.