FEATURES
MECHANICAL DA
TA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
โ—
Low profile package
โ—
Ideal for automated placement
โ—
Ultrafast reverse recovery time
โ—
Low power losses, high efficiency
โ—
Low forward voltage drop
โ—
High surge capability
โ—
High temperature soldering
๏ผš
260
โ„ƒ
/10 seconds at terminals
โ—
Component in accordance to
RoHS 2002/95/1 and WEEE 2002/96/EC
โ— Case:
JEDEC SOD-123 molded plastic
body over passivated chip
โ— Terminals:
Solder plated, solderable per
J-STD-002B and JESD22-B102D
โ— Polarity:
Laser band denotes cathode end
โ— Weight: 0.017gram
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SS
SYMBOLS
UNITS
20
14
20
VRRM
V
RMS
V
DC
I
(AV)
I
FSM
VF
3
.0
80.0
0.70
Operating junction temperature range
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current T
A
=25 C
at rated DC blocking voltage T
A
=100 C
IR
0.5
T
J
T
STG
Storage temperature range
30
21
30
40
28
40
50
35
50
60
42
60
80
56
80
100
70
100
70
49
70
90
63
90
VOLTS
VOLTS
VOLTS
Amp
Amps
Volts
C
mA
C
-50 to +150
-50 to +125 -50 to +150
20.0
10.0
0.55 0.850.52
MDD Catalog
Number
32D1F
SS
33D1F
SS
34D1F
SS
35D1F
SS
36D1F
SS
37D1F
SS
38D1F
SS
39D1F
SS
310D1F
SS32D1F~SS310D1F
SOD-123
๏ฟฝ๏ฟฝ
CAUTION: These devices are sensitive to electros
tatic discharge;
follow
proper
IC Handling Procedures.
(
and designs)
ar
e
regis
tered trademarks
of
SU
M Semiconductor
Corporation.
Copyright
SUM
Semiconductor
Corporation.
All
Rights
Reserved.
All other
trademarks
mentioned
are
the property of
their respective owners.
3
2.4
1.8
1.2
0.6
0
0 25 50 75 100 125 150 175
80
64
48
32
16
0
0.2 0.4 0.6 0.8 1.0 1.1
FIG. 3-TYPICAL INSTANTANEOUS FOR
WARD
CHARACTERISTICS
NUMBER OF CYCLES AT 60 Hz
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
FIG. 1- FORWARD CURRENT DERATING CURVE
A
VERAGE FORWARD RECTIFIED CURREN
T,
AMPERES
INST
ANTANEOUS FOR
WARD
CURRENT,AMPERES
PEAK FOR
WA
RD SURGE CURRENT,
AMPERES
INSTANTANEOUS FORW
ARD VOLTAGE,
VOLTS
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
1
10 100
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0.01
0.1
1
20
10
T
J
=25 C
PULSE WIDTH=300
ยต
s
1%DUTY CYCLE
0 20 40 60 80 100
100
10
1
0.1
0.01
0.001
TJ=25 C
TJ=100 C
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
INST
ANTANEOUS REVERSE CURRENT,
MILLIAMPERES
AMBIENT TEMPERATURE, C
SS37D1F-SS310D1F
SS32D1F-SS36D1F
TJ=75 C
SS35D1F-SS36D1F
SS32D1F-SS34D1F
SS37D1F-SS310D1F
SS32D1F~SS310D1F
2
CAUTION: These devices are sensitive to electros
tatic discharge;
follow
proper
IC Handling Procedures.
(
and designs)
ar
e
regis
tered trademarks
of
SU
M Semiconductor
Corporation.
Copyright
SUM
Semiconductor
Corporation.
All
Rights
Reserved.
All other
trademarks
mentioned
are
the property of
their respective owners.
V 1.0