MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Note:
1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.2x0.2
”
(5.0x5.0mm) copper pad areas
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
VOLTS
VOLTS
VOLTS
SYMBOLS
UNITS
Amp
Amps
Volts
VRRM
V
RMS
V
DC
I
(AV)
I
FSM
VF
3.0
80.0
0.70
Operating junction temperature range
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
(see fig.1)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current T
A
=25 C
at rated DC blocking voltage T
A
=100 C
Typical junction capacitance (NOTE 1)
IR
0.3
R
θ
JA
C
J
T
J
,
T
STG
50.0
400
pF
C
mA
Typical thermal resistance (NOTE 2)
C/W
Storage temperature range
C
-50 to +150
-50 to +125
3.0
0.55 0.85
MECHANICAL DATA
20
14
20
40
28
40
60
42
60
80
56
80
100
70
100
200
140
200
150
105
150
0.95
MDD Catalog
Number
Metal silicon junction,majority carrier conduction
For surface mounted applications
Low power loss,high efficiency
High forward surge current capability
For use in low voltage,high frequency inverters,
free wheeling,and polarity protection applicatlons
Case
: JEDEC SMBF molded plastic body
Terminals
: leads solderable per MIL-STD-750,
Method 2026
Mounting Position: Any
W
eight:57mg/0.002oz
450
70.0
0.5
5.0
0.086(2.20)
0.075(1.90)
0.146(3.70)
0.138(3.50)
0.173(4.4)
0.165(4.2)
SMBF
Cathode Band
Top View
0.051(1.30)
0.043(1.10)
0.010(0.26)
0.0071(0.18)
0.051(1.30)
0.039(1.0)
0.216(5.5)
0.200(5.10)
Dimensions in inches and (millimeters)
SS32BF-SS320BF
SS32BF SS34BF SS36BF SS38BF SS310BF SS315BF SS320BF
1
CAUTION: These devices are sensitive to electrost atic discharge; follow proper IC Handling Procedures.
(and designs) are registered trademarks of SUM Semiconductor Corporation.
Copyright SUM Semiconductor Corporation. All Rights Reserved.
All other trademarks mentioned are the property of thei r respecti ve owners.
www.sumsemi.com
1
CAUTION: These devices are sensit ive to elect rostatic discharge; follow proper IC Handling Procedures.
(and designs) are registered trademarks of SUM Semiconductor Corporation.
Copyright SUM Semiconduct or Corporation. All Rights Reserved.
All other trademarks mentioned are the property of thei r respecti ve owners.
www.sumsemi.com
1
CAUTION: These devices are sensitive to electrost atic discharge; f ollow proper IC Handling Procedures.
(and designs) are registered trademarks of SUM Semiconductor Corporation.
Copyright SUM Semiconduct or Corporation. All Rights Reserved.
All other trademarks mentioned are the property of thei r respecti ve owners.
www.sumsemi.com
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
(and designs) are registered trademarks of SUM Semiconductor Corporation.
Copyright SUM Semiconduct or Corporation. All Rights Reserved.
All other trademarks mentioned are the property of thei r respecti ve owners.
www.sumsemi.com
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
(and designs) are registered trademarks of SUM Semiconductor Corporation.
Copyright SUM Semiconduct or Corporation. All Rights Reserved.
All other trademarks mentioned are the property of thei r respecti ve owners.
www.sumsemi.com
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
(and designs) are registered trademarks of SUM Semiconductor Corporation.
Copyright SUM Semiconduct or Corporation. All Rights Reserved.
All other trademarks mentioned are the property of thei r respecti ve owners.
www.sumsemi.com
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
(and designs) are registered trademarks of SUM Semiconductor Corporation.
Copyright SUM Semiconduct or Corporation. All Rights Reserved.
All other trademarks mentioned are the property of thei r respecti ve owners.
www.sumsemi.com
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
(and designs) are registered trademarks of SUM Semiconductor Corporation.
Copyright SUM Semiconduct or Corporation. All Rights Reserved.
All other trademarks mentioned are the property of thei r respecti ve owners.
www.sumsemi.com
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
(and designs) are registered trademarks of SUM Semiconductor Corporation.
Copyright SUM Semiconduct or Corporation. All Rights Reserved.
All other trademarks mentioned are the property of thei r respecti ve owners.
www.sumsemi.com
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
(and designs) are registered trademarks of SUM Semiconductor Corporation.
Copyright SUM Semiconduct or Corporation. All Rights Reserved.
All other trademarks mentioned are the property of thei r respecti ve owners.
www.sumsemi.com
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
(and designs) are registered trademarks of SUM Semiconductor Corporation.
Copyright SUM Semiconduct or Corporation. All Rights Reserved.
All other trademarks mentioned are the property of thei r respecti ve owners.
www.sumsemi.com
FEATURES
0.1
0 0.4
1.4
Fig.3 Typical Forward Characteristic
Instaneous Forward Current (A)
Instaneous Forward Voltage (V)
1.0
10
0.60.2 0.8 1.0 1.2 1.81.6
SS32BF/SS34BF
SS36BF/SS38BF
SS310BF
SS315BF/SS320BF
20
10 100
1
30
40
50
20
60
80
70
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
Peak
A)Forward Surage Current (
Number of Cycles at 60Hz
Fig.2 Typical Reverse Characteristics
Instaneous Current (
μ
A)
Reverse
20 40 60 800
T =25
J
°
C
T =100
J
°
C
Percent of Rated Peak Reverse Voltage
（%）
100
10
0
10
1
10
2
10
3
10
4
T =75
J
°
C
SS32BF/SS36BF
SS38BF-SS320BF
0.6
1.2
1.8
2.4
3.0
3.5
0.0
25 50 75 100 125 150
Fig.1 Forward Current Derating Curve
Average Forward Current (A)
Single phase half wave resistive
or inductive P.C.B mounted on
0.5
×
0.5"(12.7 )
×
12.7mm pad
areas
0.01 100
1
10
100
Fig.6- Typical Transient Thermal Impedance
Transient Thermal Impedance
（
/W
）
°
C
t, Pulse Duration
（
sec
）
0.1 1 10
Lead Temperature (
°
C)
Fig.4 Typical Junction Capacitance
Junction Capacitance (
pF)
Reverse Voltage (V)
10
0.1 10
100
500
20
100
1
1000
T =25
J
°
C
200
SS32BF~SS36BF
SS38BF~SS320BF
90
8.3 ms Single Half Sine Wave
(JEDEC Method)
SS32BF-SS38BF
SS310BF-SS320BF
S
S32BF-SS320BF
2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
(and designs) are registered trademarks of SUM Semiconductor Corporation.
Copyright SUM Semiconduct or Corporation. All Rights Reserved.
All other trademarks mentioned are the property of thei r respecti ve owners.
www.sumsemi.com
V 1.0