JEDEC SMA molded plastic body
FEATURES
MECHANICAL DATA
Case:
Terminals:
Plated axial leads, solder
able per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position: Any
Weight: 0.012 ounce, 0.3 gram
M7
M6M5M4
M3
M2M1
S
YMB
OLS U
NIT
V
RRM
50 100 200 400 600 800 1000
V
olts
V
RMS
35 70 140 280 420 560 700
V
olts
M
a
xim
u
m D
C
B
l
oc
kin
g
V
o
lt
ag
e
V
DC
50 100 200 400 600 800 1000
V
olts
I
(AV)
1.
0
Am
ps
I
FSM
30
Am
ps
V
F
1.1 V
olts
T
A
=
25
5
.
0
T
A
=
100
I
R
50
" A
I
R(AV)
30
" A
C
J
13
p
F
R
#JA
50 /W
T
J
-55
t
o
+
150
T
STG
-55
t
o
+
150
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Construction utilizes void-free
molded plastic technique
Low reverse leakage
High forward surge current
capability
High temperature soldering guaranteed:
250°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
M1~M7
Ratings at 25℃ ambient temperature unlessotherwise speci fied
Single Phase, half wave, 60Hz, resist i ve or inductive load
For capacitive l oad derate current by 20%
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum Average Forward Rectified Current
0. 375 (9.5mm) lead length at TA= 25
Peak Forward Surge Current
8.3mS single half sine wave superimposed on
rated load(JEDEC method)
Maximum Instantaneous Forward Voltage @1.0A
Maximum DC Reverse Current at Rated
DC Blocking Voltageper element
Maximum Full Load Reverse Current, full cycle
average 0.375 (9.5mm) lead lengthat T
L
=75
Typical Junction Capacitance(Note 1)
Typical Thermal Resistance (Note2)
Operating Junction Temperature Range
Storage Temperature Range
１
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
(and designs) are registered trademarks of SUM Semiconductor Corporation.
Copyright SUM Semiconductor Corporation. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.
Notes:
1. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
2. Thermal Resistance from junction to terminal 6.0mm
2
copper pads to each terminal.
0 25 50 75 100 125 150 175
0
0.2
0.4
0.6
0.8
1.0
1
10 100
5.0
10
15
20
25
30
0.6 0.8 1.0 1.2 1.4 1.6 1.8
0.
01
0.1
1
10
20
0.1 1 10 100
1
10
100
0.01 0.1 1 10 100
0.1
1
10
100
020406080100
0.01
0.1
1
10
10
0
1,00
0
FIG.1 - FORWARD CURRENT DERATING CURVE
AMBIENT TEMPERATURE, °C
AVERAGE FORWARD RECTIFIED CURRENT,
AMPERES
0.375” (9.5mm) LEAD LENGTH
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
NUMBER OF CYCLES AT 60 H
Z
PEAK FORWARD SURGE CURRENT,
AMPERES
T
J
=25°C
f=1.0 MHz
Vsig=50mVp-p
T
J
=25°C
T
J
=100°C
T
J
=150°C
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT,
AMPERES
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
t, PULSE DURATION, sec.
TRANSIENT THERMAL IMPEDANCE, °C/W
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE, VOLTS
JUNCTION CAPACITANCE, pF
FIG. 3 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
PERCENTAGE OF PEAK REVERSE VOLTAGE, %
INSTANTANEOUS REVERSE CURRENT, MICROAMPERES
8.3ms SINGLE HALF SINE WAVE
(JEDEC Method)
T
A
=75°C
T
J
=25°C
PULSE WIDTH=300µs
1% DUTY CYCLE
60 H
Z
RESISTIVE OR
INDUCTIVE LOAD
M1~M7
2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
(and designs) are registered trademarks of SUM Semiconductor Corporation.
Copyright SUM Semiconductor Corporation. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.
V 1.0