S8050
www.msksemi.com
Copyright© Msksemi Incorporated
PACKAGE OUTLINE
MARKING
SOT-23
Reference News
TRANSISTOR (NPN)
FEATURES
Complimentary to S8550
Collector Current: IC=0.5A
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage
40 V
V
CEO
Collector-Emitter Voltage
25 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current -Continuous 0.5 A
P
C
Collector Dissipation
0.3 W
R
。JA
Thermal Resistance from Junction to Ambient
417
℃/W
T
j
Junction Temperature 150
℃
T
stg
Storage Temperature -55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage
V
(BR)CBO
I
C
= 100μA, I
E
=0
40 V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
=1mA, I
B
=0 25 V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=100μA, I
C
=0
5 V
Collector cut-off current
I
CBO
V
CB
=40 V , I
E
=0 0.1
μ
A
Collector cut-off current
I
CEO
V
CB
=20V , I
E
=0 0.1
μA
Emitter cut-off current
I
EBO
V
EB
= 5V , I
C
=0 0.1
μ
A
DC current gain
h
FE(1)
V
CE
=1V, I
C
= 50mA
120
400
h
FE(2)
V
CE
=1V, I
C
= 500mA 50
Collector-emitter saturation voltage
V
CE
(sat)
I=500 mA, I
B
= 50mA 0.6 V
Base-emitter saturation voltage
V
BE
(sat)
I
C
=500 mA, I
B
= 50mA 1.2 V
Transition frequency
f
T
V
CE
=6V, I
C
= 20mA
f=
30MHz
150 MHz
CLASSIFICATION OF h
FE(1)
Rank
L H J
Range
120-200 200-350 300-400
J3Y
1. BASE
2. EMITTER
3.COLLECTOR