DIF120SIC053
DIF120SIC053
Silicon Carbide (SiC) MOSFET
Siliziumkarbid (SiC) MOSFET
I
D
= 52 A
R
DS(on)
< 53 mΩ
T
jmax
= 175°C
V
DSS
= 1200 V
P
D
= 278 W
Version 2024-05-07
TO-247-4L
SPICE Model & STEP File
1
)
Marking
Type / Typ
HS Code 85412900
Typical Applications
EV Charging Stations
Solar Inverter
Battery Charger
Power Supplies
Commercial / industrial grade
Suffix -Q: AEC-Q101 compliant
1
)
Suffix -AQ: in AEC-Q101 qualification
1
)
Typische Anwendungen
Ladestationen für E-Fahrzeuge
Solar-Wechselrichter
Batterieladegeräte
Stromversorgungen
Standardausführung
Suffix -Q: AEC-Q101 konform
1
)
Suffix -AQ: in AEC-Q101 Qualifikation
1
)
Features
SiC Wide Bandgap Material
Large clearance and creepage
Kelvin source for fast switching and
reduced noise level at Gate
Low on state resistance
Fast switching times
Low gate charge
Compliant to RoHS (examp. 7a),
REACH, Conflict Minerals
1
)
Besonderheiten
SiC Material mit großem Bandabstand
Große Luft- und Kriechstrecken
Kelvin-Source für schnelles Schalten
und reduzierte Störpegel am Gate
Niedriger Einschaltwiderstand
Schnelle Schaltzeiten
Niedrige Gate-Ladung
Konform zu RoHS (Ausn. 7a),
REACH, Konfliktmineralien
1
)
Mechanical Data
1
) Mechanische Daten
1
)
Packed in tubes/cardboards 30/450 Verpackt in Stangen/Kartons
Weight approx. 6 g Gewicht ca.
Case material UL 94V-0 Gehäusematerial
Solder & assembly conditions 260°C/10s Löt- und Einbaubedingungen
MSL N/A
Maximum ratings
1
) Grenzwerte
2
)
DIF120SIC053/-AQ
Drain-Source voltage
Drain-Source-Spannung
V
GS
= 0 V (short) V
DSS
1200 V
Gate-Source-voltage
Gate-Source-Spannung
AC, <1% duty cycle
recommended
V
GSS
-8 V to 22 V
-4 V to 18 V
Recommended operating Gate-Source-voltage
Empfohlene Gate-Source-Betriebsspannung
Turn-on
Turn-off
V
GS(on)
V
GS(off)
15 V
0 V
Power dissipation – Verlustleistung T
C
= 25°C
2
) P
tot
278 W
Drain current continous
Drainstrom dauernd
T
C
= 25°C
3
)
T
C
= 100°C
3
)
I
D
65 A
46 A
Peak Drain current – Drain-Spitzenstrom
3
) I
DM
100 A
Source current continous
Sourcestrom dauernd
T
C
= 25°C
3
) I
S
50 A
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
T
j
T
S
-55…+175°C
-55...+175°C
1 Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
1 T
A
= 25°C, unless otherwise specified – T
A
= 25°C, wenn nicht anders angegeben
2 Measured at heat flange – Gemessen an der Kühlfahne
3 Pulse width refer to SOA diagram – Pulsbreite siehe SOA-Diagramm
© http://www.diotec.com/ 1
G (4)
(1)
S
1
D
(2)
S (3)
2
Pb
E
L
V
W
E
E
E
R
o
H
S
Halogen
FREE
1
2
3
4
DIF120SIC053
Characteristics (static) Kennwerte (statisch)
T
j
= 25°C Min. Typ. Max.
Drain-Source breakdown voltage – Drain-Source-Durchbruchspannung
I
D
= 100 µA V
GS
= 0 V (short) V
(BR)DSS
1200 V – –
Drain-Source leakage current – Drain-Source Leckstrom
V
DS
= V
DSS
V
GS
= 0 V (short) I
DSS
– 1 µA 100 µA
Gate-Body leakage current – Gate-Substrat Leckstrom
V
GS
= 18 V V
DS
= 0 V (short) I
GSS
– – 250 nA
Gate-Source threshold voltage – Gate-Source Schwellspannung
V
GS
= V
DS
I
D
= 9.5 mA T
j
= 25°C
V
GS
= V
DS
I
D
= 9.5 mA T
j
= 175°C
V
GS(th)
1.9 V
–
2.6 V
1.8 V
4 V
–
Drain-Source on-state resistance – Drain-Source Einschaltwiderstand
V
GS
= 18 V I
D
= 33 A T
j
= 25°C
V
GS
= 18 V I
D
= 33 A T
j
= 175°C
R
DS(on)
–
40 mΩ
65 mΩ
53 mΩ
–
Characteristics (dynamic) Kennwerte (dynamisch)
T
j
= 25°C Min. Typ. Max.
Forward Transconductance – Übertragungssteilheit
V
DS
= 20 V I
D
= 33 A g
FS
– 21 S –
Input Capacitance – Eingangskapazität
V
DS
= 1 kV V
GS
= 0 V f = 1 Mhz V
AC
= 25 mV C
iss
– 2070 pF –
Output Capacitance – Ausgangskapazität
V
DS
= 1 kV V
GS
= 0 V f = 1 Mhz V
AC
= 25 mV C
oss
– 112 pF –
Reverse Transfer Capacitance – Rückwirkungskapazität
V
DS
= 1 kV V
GS
= 0 V f = 1 Mhz V
AC
= 25 mV C
rss
– 11 pF –
Stored Energy – Gespeicherte Energie
V
DS
= 1 kV V
GS
= 0 V f = 1 Mhz V
AC
= 25 mV E
oss
– 66 µJ –
Turn-On Delay & Rise Time – Einschaltverzögerung und Anstiegszeit
V
DD
= 800 V I
D
= 20 A V
GS
= -4/18 V R
L
= 20 mΩ R
G
= 2 Ω
t
d(on)
t
r
–
17 ns
58 ns
–
Turn-Off Delay Time & Fall Time – Ausschaltverzögerung und Abfallzeit
V
DD
= 800 V I
D
= 20 A V
GS
= -4/18 V R
L
= 20 mΩ R
G
= 2 Ω
t
d(off)
t
f
–
26 ns
15 ns
–
Switching Energy – Schaltenergie
V
DD
= 800 V I
D
= 20 A V
GS
= -4/18 V R
L
= 20 mΩ R
G
= 2 Ω
E
on
E
off
E
total
–
1.41 mJ
0.75 mJ
2.16 mJ
–
Total Gate Charge – Gesamte Gate-Ladung
V
DD
= 800 V I
D
= 20 A V
GS
= 0/15 V Q
g
– 121 nC –
Gate-Source Charge – Gate-Source-Ladung
V
DD
= 800 V I
D
= 20 A V
GS
= 0/15 V Q
gs
– 34 nC –
Gate-Drain Charge – Gate-Drain-Ladung
V
DD
= 800 V I
D
= 20 A V
GS
= 0/15 V Q
gd
– 20 nC –
Intrinsic Gate resistance – Innerer Gatewiderstand
f = 1 Mhz V
AC
= 25 mV R
Gi
– 4.9 Ω –
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