REV.08
1．BASE
SOT-23
2．EMITTER
3．COLLECTOR
1
2
3
．
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
V
V
CEO
Collector-Emitter Voltage
V
V
EBO
Emitter-Base Voltage
V
I
C
Collector Current -Continuous mA
P
C
Collector Power Dissipation mW
T
j
Junction Temperature 150
℃
T
stg
S torage Temperature -55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Te conditionsst MIN TYP MAX UNIT
Collector-base breakdown voltage
V
(BR)CBO
V
Collector-emitter breakdown voltage
V
(BR)CEO
V
Emitter-base breakdown voltage
V
(BR)EBO
V
Collector cut-off current
I
CB
O
Emitter cut-off current
I
EBO
DC current gain
Collector-emitter saturation voltage
V
CE
(sat)
Base-emitter saturation voltage
V
BE
(sat)
Transition frequency
f
T
MHz
300
h
FE
150
50 0
I
C
=
500mA, I
B
=
50 mA
I
C
= 500mA, I
B
= 50 mA
V
CE
=6V,
I
C
= 20mA
f=
30MHz
0.6
1.2
MAXIMUM RATINGS (T
A
=25℃
unless otherwise
noted)
RθJA
Thermal resistance From junction to ambient
416
℃/W
100
nA
100
nA
100
nA
Collector cut-off curren
I
CEO
V
CE
=
20V,
I
B
=0
Collector output capacitance
VCB=10V, IE=0, f=
1MHz
5
pF
V
V
1
of
3
Rank
L
H
Range
120~200
200~350
COB
Classification
of h
FE
40
25
5
40
25
5
I
C
=
100uA,
I
E
=0
I
C
= 0.1mA,
I
B
=0
I
E
=100u
A
,
I
C
=0
V
CB
=40V,
I
E
=0
V
EB
=
5V,
I
C
=0
350120
V
CE
=1V,
I
C
=
50mA
V
CE
=1V,
I
C
=
500mA
40
S9013
NPN Silicon Epitaxial Planar
Transistor
Features
âš« Complementary to S9012
âš« Power dissipation of 300mW
âš« High stability and high reliability
