REV.08
1．BASE
SOT-23
2．EMITTER
3．COLLECTOR
1
2
3
．
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
V
V
CEO
Collector-Emitter Voltage
V
V
EBO
Emitter-Base Voltage
V
I
C
Collector Current -Continuous mA
P
C
Collector Power Dissipation mW
T
j
Junction Temperature
℃
T
stg
S torage Temperature
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Te conditionsst MIN TYP MAX UNIT
Collector-base breakdown voltage
V
(BR)CBO
V
Collector-emitter breakdown voltage
V
(BR)CEO
V
Emitter-base breakdown voltage
V
(BR)EBO
V
Collector cut-off current
I
CB
O
Emitter cut-off current
I
EBO
DC current gain
Collector-emitter saturation voltage
V
CE
(sat)
Base-emitter saturation voltage
V
BE
(sat)
Transition frequency
f
T
MHz
h
FE
85 400
150
RθJA
Thermal resistance From junction to ambient
℃/W
I
E
=-50u
A
,
I
C
=0
nA
nA
nA
Collector cut-off curren
I
CEO
Collector output capacitance
C
OB
5
pF
V
V
1
of
3
PNP Silicon Epitaxial Planar
Transistor
S9013S
Features
âš« Complementary to S9012S
âš« Power dissipation of 300mW
âš« High stability and high reliability
MARKING:
J3
MAXIMUM RATINGS (T
A
=25℃
unless otherwise
noted)
500
40
30
6
300
150
-55-150
416
70
I
C
=
50uA,
I
E
=0
I
C
= 1mA,
I
B
=0 30
6
V
CB
=40V,
I
E
=0
100
V
EB
=
5V,
I
C
=0
100
V
CE
=
20V,
I
B
=0
100
V
CE
=1V,
I
C
=
50mA
I
C
=500mA,
I
B
=
50mA
0.6
1.2
I
C
=500mA,
I
B
=
50mA
V
CE
=6V,
I
C
= 20mA
f=
30MHz
VCB=10V, IE=0, f=
1MHz
Rank
L
H
J
Range
120~200
200~350
300~400
Classification
of h
FE
