REV.08
1．BASE
SOT-23
2．EMITTER
3．COLLECTOR
1
2
3
．
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
V
V
CEO
Collector-Emitter Voltage
V
V
EBO
Emitter-Base Voltage
V
I
C
Collector Current -Continuous mA
P
C
Collector Power Dissipation mW
T
j
Junction Temperature 150
℃
T
stg
S torage Temperature -55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Te conditionsst MIN TYP MAX UNIT
Collector-base breakdown voltage
V
(BR)CBO
V
Collector-emitter breakdown voltage
V
(BR)CEO
V
Emitter-base breakdown voltage
V
(BR)EBO
V
Collector cut-off current
I
CB
O
Emitter cut-off current
I
EBO
DC current gain
Collector-emitter saturation voltage
V
CE
(sat)
Base-emitter saturation voltage
V
BE
(sat)
Transition frequency
f
T
MHz
300
h
FE
85 400
150
-50
-30
-8
-50 0
I
C
= -1mA,
I
B
=0
V
CB
=-35V,
I
E
=0
V
EB
=
-4V,
I
C
=0
V
CE
=-1V, I
C
= -50 mA
I
C
=-500mA, I
B
= -50 mA
I
C
=-500mA, I
B
= -50 mA
V
CE
=-6V,
I
C
= -20mA
f=
30MHz
-50
-30
-8
-0.6
-1.2
S9012S
MARKING:
2T1
MAXIMUM RATINGS (T
A
=25℃
unless otherwise
noted)
RθJA
Thermal resistance From junction to ambient
416
℃/W
I
C
=
-50uA,
I
E
=0
I
E
=-50u
A
,
I
C
=0
-100
nA
-100
nA
-100
nA
Collector cut-off curren
I
CEO
V
CE
=
-20V,
I
B
=0
Collector output capacitance
VCB=-10V, IE=0, f=
1MHz
5
pF
V
V
1
of
3
PNP Silicon Epitaxial Planar
Transistor
Features
âš« Complementary to S9013S
âš« Power dissipation of 300mW
âš« High stability and high reliability
Rank
L
H
J
Range
120~200
200~350
300~400
COB
Classification
of h
FE
