Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 40 V
V
CEO
Collector-Emitter Voltage
25
V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current -Continuous
0.5
A
P
C
Collector Dissipation 0.2 W
T
j
Junction Temperature
150
℃
T
stg
Storage Temperature
-55-+150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
I
C
= 100
µA
, I
E
=0
40
V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
=1mA, I
B
=0
25
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=100
µA
, I
C
=0
5
V
Collector cut-off current
I
CBO
V
CB
=40 V, I
E
=0
0.1
µA
Collector cut-off current
I
CEO
V
CB
=20V, I
E
=0
0.1
µA
Emitter cut-off current
I
EBO
V
EB
I= 5V,
C
=0
0.1
µA
H
FE(1)
V
CE
=1V, I
C
= 50mA
120
400
DC current gain
H
FE(2)
V
CE
=1V, I
C
= 500mA
50
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=500 mA, I
B
= 50mA
0.6
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
=500 mA, I
B
= 50mA
1.2
V
Transition frequency
f
T
V
CE
=6V, I
C
= 20mA
f=30MHz
150
MHz
S8050TH
1 of 3
REV.08
S8050TH
TRANSISTOR (NPN)
FEATURES
Complimentary to S8550T
Collector Current: I
C
=0.5A
MARKING:J3Y
MAXIMUM RATINGS (T
A
=25℃
unless otherwise noted)
1. BASE
2. EMITTER
3. COLLECTOR
2
CLASSIFICATION OF hFE
(1)
JHLRank
Range
300-400200-350120-200
SOT-523
3
1
