Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 40 V
V
CEO
Collector-Emitter Voltage
25
V
V
EBO
Emitter-Base Voltage 6 V
I
C
Collector Current -Continuous
A
P
C
Collector Dissipation 0.35 W
T
j
Junction Temperature
150
℃
T
stg
Storage Temperature -55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
I
C
= 100
µA
, I
E
=0
40
V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
=2mA, I
B
=0
25
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=100
µA
, I
C
=0
6
V
Collector cut-off current
I
CBO
V
CB
=35 V, I
E
=0
0.1
µA
Emitter cut-off current
I
EBO
V
EB
I= 6V,
C
=0
0.1
µA
H
FE(1)
V
CE
=1V, I
C
= 100mA
200
350
DC current gain
H
FE(2)
V
CE
=1V, I
C
= 800mA
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=800 mA, I
B
= 80mA
0.5
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
=800 mA, I
B
= 80mA
1.2
V
Transition frequency
f
T
V
CE
=10V, I
C
= 50mA
120
MHz
1 of 3
REV.08
1．BASE
SOT-23
2．EMITTER
3．COLLECTOR
1
2
3
TRANSISTOR (NPN)
FEATURES
Complimentary to SS8550
Collector Current: I
C
=1.5A
MARKING:Y1
MAXIMUM RATINGS (T
A
=25℃
unless otherwise noted)
SS8050
1.5
