REV.08

Symbol Parameter Value Units

V

CBO

Collector-Base Voltage

V

V

CEO

Collector-Emitter Voltage

V

V

EBO

Emitter-Base Voltage

V

I

C

Collector Current -Continuous

P

C

Collector Power Dissipation mW

T

j

Junction Temperature 150

℃

T

stg

S torage Temperature

℃

Parameter Symbol conditionsTest MIN TYP MAX UNIT

Collector-base breakdown voltage

V

(BR)CBO

V

Collector-emitter breakdown voltage

V

(BR)CEO

V

Emitter-base breakdown voltage

V

(BR)EBO

V

Collector cut-off current

I

CB

O

Emitter cut-off current

I

EBO

DC current gain

Collector-emitter saturation voltage

V

CE

(sat)

V

Base-emitter saturation voltage

V

BE

(sat)

V

h

FE

-55 to +150

mA

200

ELECTRICAL CHARACTERISTICS (Tamb=25

℃

unless otherwise specified)

DC current gain

h

FE

DC current gain

h

FE

Collector-emitter saturation voltage

V

CE

(sat)

V

Base-emitter saturation voltage

V

BE

(sat)

V

1

of

3

Transition frequency

f

T

MHz

Collector output capacitance

Cob

300

PF

50

nA

50

nA

V

CB

=120V, I

E=0

V

EB

=4V, I

C=0

V

CE

=10V, Ic=-

10mA

f=100MHz

V

CB

=10V, I

E

=0,

f=1MHZ

6

100

MMDT5551

180

160

6

200

R

θJA

Thermal Resistance Junction to Ambient

625

℃/W

180

I

C

=100uA,

IE=0

I

C

= 1mA, I

B

=0

I

E

=10uA, IC=0

160

6

V

CE

=5V

V

CE

=5V,

I

C

=

1mA

V

CE

=5V

I

C

=

10mA

I

C

=

50mA

80

80

30

250

I

C

=10mA,

I

B

=

1mA

0.15

0.2

I

C

=50mA,

I

B

=5mA

I

C

=10mA,

I

B

=1mA

I

C

=50mA,

I

B

=

5mA

1

1

NPN Silicon Epitaxial Planar

Transistor

Features

⚫

Epitaxial Planar Die Construction

⚫

Comprehensive PNP Type Available (MMDT5401) Ideal

for Medium Power Amplification and Switching

⚫

Ultra Small Surface Mount Package

MAXIMUM RATINGS (T

A

=25℃

unless otherwise noted)

SOT-363

REV.08

2

of

3

Electrical

Characteristic Curve

MMDT5551