1. Description
Advantages
CSQM10P03 uses advanced trench technology
and design to provide excellent R
DS(ON)
with low
gate charge. It can be used in a wide variety of
applications.
Key Characteristics
Parameter Value Unit
V
DS
-30 V
I
D
-14 A
R
DS(ON)
@10V
.Typ
8 mΩ
R
DS(ON)
@4.5V
.Typ
10.5 mΩ
Features
High power and current handing capability
Lead free product is acquired
RoHS product
Surface mount package
Applications
Load switch
Power management
Ordering Informations
Device Marking
Ordering Codes Package Product Code Packing
QM10P03
CSQM10P03-E SOP-8 CSQM10P03 Reel
CSQM10P03-E
(1)CSQM10P03: -30V 10.8mΩ
(2)E:SOP-8
(2) Package type
(1) Chip name
SOP-8 Top View
YYWW:Year&Week
ZZ:Assembly Code
SSSSS:Lot Code
1
ciss © Copyright reserved
Ver1.1
Guoke Saisi (Beijing) Technology Co., Ltd 010-82745680
CSQM10P03
QM10P03
2. Absolute Ratings
at T
C
= 25°C, unless otherwise specified
Symbol
Parameter
Rating
Units
V
DSS
Drain-to-Source Voltage
-30
V
I
D
Continuous Drain Current
-14
A
Continuous Drain Current T
C
= 100 °C
-8.8
A
I
DM
Pulsed Drain Current(Note1)
-56
A
P
D
Power Dissipation
3.3
W
V
GS
Gate-to-Source Voltage
±20
V
T
J
T
stg
Operating Junction and Storage
Temperature Range
15055 to 150
3. Thermal Characteristics
Symbol
Parameter
Rating
R
θJA
Junction-to-Ambient
38.3
4. Electrical Characteristics
at T
C
= 25°C, unless otherwise specified
OFF Characteristics
Symbol
Parameter
Test
Conditions
Values
Units
Min.
Typ.
Max.
V
DSS
Drain to Source Breakdown
Voltage
V
GS
=0V,
I
D
=250µA
-30
--
--
V
I
DSS
Drain to Source Leakage
Current
V
DS
=-30V,
V
GS
= 0V,
T
j
= 25
--
--
-1
µA
I
GSS
Gate to Source Forward
Leakage
V
GS
=±20V
--
--
100
nA
ON Characteristics
Symbol
Parameter
Test
Conditions
Values
Units
Min.
Typ.
Max.
R
DS(ON)
Drain-to-Source On-
Resistance
V
GS
=-10V,
I
D
=-14A(Note2)
--
8
10.8
m
V
GS
=-4.5V,
I
D
=-14A(Note2)
--
10.5
16
m
V
GS(TH)
Gate Threshold Voltage
V
DS
= V
GS
,
I
D
=-250µA(Note2)
-1.0
-1.5
-2.5
V
2
ciss © Copyright reserved
Ver1.1
Guoke Saisi (Beijing) Technology Co., Ltd 010-82745680
CSQM10P03