2.ABSOLUTE RATINGS
at T
C
=25°C,unless otherwise specified
Symbol Parameter Rating Units
V
DSS
Drain-Source Voltage 100 V
I
D
Continuous Drain Current, Silicon Limited 50 A
Continuous Drain Current, Package Limited 60 A
Continuous Drain Current @T
C
=100°C, Silicon Limited 31.5 A
I
DM
Note1
Pulsed Drain Current 200 A
V
GS
Gate-Source Voltage ±20 V
E
AS
Note2
Avalanche Energy 100 mJ
P
D
Power Dissipation 56 W
Derating Factor above 25°C 0.447
W/℃
T
J
,T
stg
Operating Junction and Storage Temperature Range
150,–55 to 150
℃
T
L
Maximum Temperature for Soldering 260
℃
Note1:Repetitive Rating:Pulse width limited by maximum junction temperature
Note2:L=0.5mH, Ias=20A, Start T
J
=25℃
3.Thermal characteristics
Symbol Parameter Max Units
R
θJC
thermal resistance, Junction-Case 2.24
℃/W
R
θJA
thermal resistance, Junction-Ambient 75
℃/W
4.Electrical Characteristics
at T
C
=25°C, unless otherwise specified
OFF Characteristics
Symbol Parameter Test Conditions
Values
Units
Min Typ Max
V
DSS
Drain-Source Breakdown
Voltage
V
GS
=0V, I
D
=250µA 100 110 -- V
I
DSS
Drain-Source Leakage Current
V
DS
=100V, V
GS
=0V -- -- 1 µA
V
DS
=80V, V
GS
=0V
@T
C
=125°C
-- -- 100 µA
I
GSS(F)
Gate-Source Forward Leakage V
GS
=+20V -- -- 100 nA
I
GSS(R)
Gate-Source Reverse Leakage V
GS
=-20V -- -- -100 nA
CSP12N10G
ciss © Copyright reserved
2
Ver1.1
Guoke Saisi (Beijing) Technology Co., Ltd 010-82745680