Step-Down Converter
,
1.Description
CSP12N10G, the N-channel Enhanced Power
MOSFETs, is obtained by advanced double
trench technology which reduce the conduction
loss, and improve switching performance. This is
suitable device for synchronous rectifiers and high
speed switching applications.
KEY CHARACTERISTICS
Parameter Value Unit
V
DSS
100 V
I
D
11 A
R
DS(on).typ
10.5
mΩ
FEATURES
Fast Switching
Low On-Resistance ( R
DS(on)
≤12mΩ )
Low Gate Charge
Low Reverse transfer capacitances
High avalanche ruggedness
RoHS product
APPLICATIONS
Synchronous rectifiers
High speed switching applications
ORDERING INFORMATION
Ordering Codes Package Product Code Packing
CSP12N10G-E SOP8 P12N10G Reel
CSP12N10G-E
(1) CSP12N10G：12mΩ/100
V
(2) E：SOP8
XXXX
YYWW ZZ
SSSSS
XXXX：Product Code
YYWW：Year&Week
ZZ：Assembly Code
SSSSS：Lot Code
(2) Package type
(1) Chip name
CSP12N10G
ciss © Copyright reserved
1
Ver1.1
Guoke Saisi (Beijing) Technology Co., Ltd 010-82745680
Step-Down Converter
,
2．ABSOLUTE RATINGS
at T
C
=25°C，unless otherwise specified
Symbol Parameter Rating Units
V
DSS
Drain-Source Voltage 100 V
I
D
Continuous Drain Current, Silicon Limited 11 A
Continuous Drain Current, Package Limited 20 A
Continuous Drain Current @T
C
=100°C, Silicon Limited 6.9 A
I
DM
Note1
Pulsed Drain Current 44 A
V
GS
Gate-Source Voltage ±20 V
E
AS
Note2
Avalanche Energy 100 mJ
P
D
Power Dissipation 2.7 W
Derating Factor above 25°C 0.022
W/℃
T
J
，T
stg
Operating Junction and Storage Temperature Range
150，–55 to 150
℃
T
L
Maximum Temperature for Soldering 260
℃
Note1：Repetitive Rating：Pulse width limited by maximum junction
temperature Note2：L=0.5mH, Ias=20A, Start T
J
=25℃
3．Thermal characteristics
Symbol Parameter Max Units
R
θJA
thermal resistance, Junction-Ambient 45
℃/W
4．Electrical Characteristics
at T
C
=25°C, unless otherwise specified
OFF Characteristics
Symbol Parameter Test Conditions
Values
Units
Min Typ Max
V
DSS
Drain-Source Breakdown
Voltage
V
GS
=0V, I
D
=250µA 100 110 -- V
I
DSS
Drain-Source Leakage Current
V
DS
=100V, V
GS
=0V -- -- 1 µA
V
DS
=80V, V
GS
=0V
@T
C
=125°C
-- -- 100 µA
I
GSS(F)
Gate-Source Forward Leakage V
GS
=+20V -- -- 100 nA
I
GSS(R)
Gate-Source Reverse Leakage V
GS
=-20V -- -- -100 nA
CSP12N10G
ciss © Copyright reserved
2
Ver1.1
Guoke Saisi (Beijing) Technology Co., Ltd 010-82745680