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Description
CS9N50, the silicon N-channel Enhanced
MOSFETs, is obtained by advanced MOSFET
technology which reduce the conduction loss,
improve switching performance and enhance the
avalanche energy. The transistor is suitable device
for SMPS, high speed switching and general
purpose applications.
KEY CHARACTERISTICS
Parameter Value Unit
V
DS@Tj.max
550 V
I
D
9 A
R
DS(ON).Typ
0.6 Ω
FEATURES
Fast Switching
Low Crss
100% avalanche tested
Improved dv/dt capability
RoHS product
APPLICATIONS
High frequency switching mode power supply
Electronic ballast
ORDERING INFORMATION
Ordering Codes Package
Product Code Packing
CS9N50-P
TO-220
CS9N50
Tube
CS9N50-A
TO-220F Tube
CS9N50-U
TO-251 Tube
CS9N50-D
TO-252
Tape Reel
CS9N50-A
(1) CS9N50:500V 9A
(2) A:TO-220F P:TO-220
U:TO-251 D：TO-252
XXXX
：
Product Code
XXXX YYWW
：
Year&Week
YYWW ZZ
SSSSS ZZ
：
Assembly Code
SSSSS
：
Lot Code
(2) Package type
(1) Chip name
ciss © Copyright reserved
1
Ver1.1
Guoke Saisi (Beijing) Technology Co., Ltd 010-82745680
CS9N50
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ABSOLUTE RATINGS
at T
C
= 25°C, unless otherwise specified
Symbol Parameter
Rating Units
V
DSS
Drain-to-Source Voltage
500 V
I
D
Continuous Drain Current
9 A
Continuous Drain Current T
C
= 100 °C
5.67 A
I
DM
Pulsed Drain Current(Note1)
36 A
V
GS
Gate-to-Source Voltage
±30 V
E
AS
Single Pulse Avalanche Energy(Note2)
520 mJ
dv/dt
Peak Diode Recovery dv/dt(Note3)
5.0 V/ns
P
D
Power Dissipation
TO-220 TO-251 TO-252
160 W
Derating Factor above 25°C
1.28
W/℃
P
D
Power Dissipation
TO-220F
48 W
Derating Factor above 25°C
0.38
W/℃
T
J
，T
stg
Operating Junction and Storage Temperature Range
150，–55 to 150
℃
T
L
Maximum Temperature for Soldering
300
℃
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Thermal characteristics
Thermal characteristics TO-220
Symbol Parameter
RATINGS Units
R
θJC
Junction-to-Case
0.78
℃/W
R
θJA
Junction-to-Ambient
62.5
℃/W
Thermal characteristics TO-220F
Symbol
Parameter RATINGS Units
R
θJC
Junction-to-Case
2.6
℃/W
R
θJA
Junction-to-Ambient
62.5
℃/W
ciss © Copyright reserved
2
Ver1.1
Guoke Saisi (Beijing) Technology Co., Ltd 010-82745680
CS9N50