Step-Down Converter
,
1.Description
CS4N65, the silicon N-channel Enhanced
MOSFETs, is obtained by advanced MOSFET
technology which reduce the conduction loss,
improve switching performance and enhance the
avalanche energy. The transistor is suitable device
for SMPS, high speed switching and general
purpose applications.
KEY CHARACTERISTICS
Parameter Value Unit
V
DS@Tj.max
700 V
I
D
4 A
R
DS(ON).Typ
2.0 Ω
FEATURES
Fast Switching
Low Crss
100% avalanche tested
Improved dv/dt capability
RoHS product
APPLICATIONS
High frequency switching mode power supply
ORDERING INFORMATION
Ordering Codes
Package
Product Code
Packing
CS4N65-P
TO-220
4N65
Tube
CS4N65-A
TO-220F
Tube
CS4N65-U
TO-251
Tube
CS4N65-D
TO-252
Tape Reel
CS4N65-A
(1) CS4N65:650V 4A
(2) A:TO-220F P:TO-220
U:TO-251 D：TO-252
XXXX：Product Code
XXXX YYWW：Year&Week
YYWW ZZ
SSSSS ZZ：Assembly Code
SSSSS：Lot Code
(2) Package type
(1) Chip name
ciss © Copyright reserved
1
Ver1.1
Guoke Saisi (Beijing) Technology Co., Ltd 010-82745680
CS4N65
Step-Down Converter
,
2．ABSOLUTE RATINGS
at T
C
= 25°C, unless otherwise specified
Symbol Parameter
Rating
V
DSS
Drain-to-Source Voltage
650
I
D
Continuous Drain Current
4
Continuous Drain Current T
C
= 100 °C
2.5
I
DM
Pulsed Drain Current(Note1)
16
V
GS
Gate-to-Source Voltage
±30
E
AS
Single Pulse Avalanche Energy(Note2)
205
dv/dt
Peak Diode Recovery dv/dt(Note3)
5.0
P
D
Power Dissipation
No FullPAK
75
Derating Factor above 25°C
0.6
P
D
Power Dissipation
FullPAK
35
Derating Factor above 25°C
0.29
T
J
，T
stg
Operating Junction and Storage Temperature Range
150，–55 to 150
T
L
Maximum Temperature for Soldering
300
3．Thermal characteristics
Thermal characteristics No FullPAK
Symbol Parameter
RATINGS
Units
R
θJC
Junction-to-Case
1.66
℃/W
R
θJA
Junction-to-Ambient
62.5
℃/W
Thermal characteristics FullPAK
Symbol
Parameter
RATINGS
Units
R
θJC
Junction-to-Case
3.5
℃/W
R
θJA
Junction-to-Ambient
62.5
℃/W
ciss © Copyright reserved
2
Ver1.1
Guoke Saisi (Beijing) Technology Co., Ltd 010-82745680
CS4N65