1.Description
CS25N60, the silicon N-channel Enhanced
MOSFETs, is obtained by advanced MOSFET
technology which reduce the conduction loss,
improve switching performance and enhance
the avalanche energy. The transistor is
suitable device for SMPS, high speed
switching and general purpose applications.
KEY CHARACTERISTICS
Parameter Value Unit
V
DS@Tj.max
600 V
I
D
25 A
R
DS(ON).Typ
0.21 Ω
Qg.
Typ
91 nC
FEATURES
Fast Switching
Low Crss (typical 20pF )
100% avalanche tested
Improved dv/dt capability
RoHS product
APPLICATIONS
High frequency switching mode power supply
ORDERING INFORMATION
Ordering Codes Package Product Code Packing
CS25N60-W
TO-3PN
CS25N60
Tube
CS25N60-F
TO-247 Tube
CS25N60-A
(1)CS25N60:600V 25A
(2)W:TO-3PN F:TO-247
XXXX：Product Code
XXXX YYWW：Year&Week
YYWW ZZ
SSSSS ZZ：Assembly Code
SSSSS：Lot Code
(2)
Package type
(1) Chip name
ciss © Copyright reserved
1
Ver1.1
Guoke Saisi (Beijing) Technology Co., Ltd 010-82745680
CS25N60
2．ABSOLUTE RATINGS
at T
C
= 25°C, unless otherwise specified
Symbol Parameter Rating Units
V
DSS
Drain-to-Source Voltage
600 V
I
D
Continuous Drain Current
25 A
Continuous Drain Current T
C
= 100 °C
15.8 A
I
DM
Pulsed Drain Current(Note1)
100 A
V
GS
Gate-to-Source Voltage
±30 V
E
AS
Single Pulse Avalanche Energy(Note2)
1760 mJ
dv/dt
Peak Diode Recovery dv/dt(Note3)
5.0 V/ns
P
D
Power Dissipation
TO-3PN TO-247
420 W
Derating Factor above 25°C
3.36
W/℃
T
J
，
T
stg
Operating Junction and Storage Temperature Range
150，–55 to 150
℃
T
L
Maximum Temperature for Soldering
300
℃
3．Thermal characteristics
Thermal characteristics (No FullPAK) TO-3PN TO-247
Symbol
Parameter RATINGS Units
R
θJC
Junction-to-Case
0.298
℃/W
R
θJA
Junction-to-Ambient
40
℃/W
ciss © Copyright reserved
2
Ver1.1
Guoke Saisi (Beijing) Technology Co., Ltd 010-82745680
CS25N60