Step-Down Converter
,
1.Description
CS10N70, the silicon N-channel Enhanced
MOSFETs, is obtained by advanced MOSFET
technology which reduce the conduction loss,
improve switching performance and enhance the
avalanche energy. The transistor is suitable
device for SMPS, high speed switching and
general purpose applications.
KEY CHARACTERISTICS
Parameter Value Unit
V
DS@Tj.max
700 V
I
D
10 A
R
DS(ON).Typ
0.7 Ω
FEATURES
Fast Switching
Low Crss
100% avalanche tested
Improved dv/dt capability
RoHS product
APPLICATIONS
High frequency switching mode power supply
ORDERING INFORMATION
Ordering Codes
Package
Product Code
Packing
CS10N70-P
TO-220
10N70
Tube
CS10N70-A
TO-220F
Tube
CS10N70-A
(1)CS10N70:700V 10A
(2)A:TO-220F P:TO-220
XXXX：Product Code
XXXX YYWW：Year&Week
YYWW ZZ
SSSSS ZZ：Assembly Code
SSSSS：Lot Code
(2) Package type
(1) Chip name
ciss © Copyright reserved
1
Ver1.1
Guoke Saisi (Beijing) Technology Co., Ltd 010-82745680
CS10N70
Step-Down Converter
,
2．ABSOLUTE RATINGS
at T
C
= 25°C, unless otherwise specified
Symbol Parameter
Rating
Units
V
DSS
Drain-to-Source Voltage
700
V
I
D
Continuous Drain Current
10
A
Continuous Drain Current T
C
= 100 °C
6
A
I
DM
Pulsed Drain Current(Note1)
40
A
V
GS
Gate-to-Source Voltage
±30
V
E
AS
Single Pulse Avalanche Energy(Note2)
750
mJ
dv/dt
Peak Diode Recovery dv/dt(Note3)
5.0
V/ns
P
D
Power Dissipation
TO-220
165
W
Derating Factor above 25°C
1.54
W/℃
P
D
Power Dissipation
TO-220F
42
W
Derating Factor above 25°C
0.43
W/℃
T
J
，T
stg
Operating Junction and Storage Temperature Range
150，–55 to 150
℃
T
L
Maximum Temperature for Soldering
300
℃
3．Thermal characteristics
Thermal characteristics TO-220
Symbol Parameter
RATINGS
Units
R
θJC
Junction-to-Case
0.65
℃/W
R
θJA
Junction-to-Ambient
62.5
℃/W
Thermal characteristics TO-220F
Symbol
Parameter
RATINGS
Units
R
θJC
Junction-to-Case
2.3
℃/W
R
θJA
Junction-to-Ambient
62.5
℃/W
ciss © Copyright reserved
2
Ver1.1
Guoke Saisi (Beijing) Technology Co., Ltd 010-82745680
CS10N70