Step-Down Converter
,
1.Description
CS10N65A, the silicon N-channel Enhanced
MOSFETs, is obtained by advanced MOSFET
technology which reduce the conduction loss,
improve switching performance and enhance the
avalanche energy. The transistor is suitable
device for SMPS, high speed switching and
general purpose applications.
KEY CHARACTERISTICS
Parameter Value Unit
V
DS
650 V
I
D
10 A
R
DS(ON).Typ
0.87 Ω
FEATURES
Fast Switching
Low Crss
100% avalanche tested
Improved dv/dt capability
RoHS product
APPLICATIONS
High frequency switching mode power supply
ORDERING INFORMATION
Ordering Codes
Package
Product Code
Packing
CS10N65A-P
TO-220
10N65A
Tube
CS10N65A-A
TO-220F
Tube
CS10N65A-A
(1)CS10N65A:650V 10A
(2)A:TO-220F P:TO-220
XXXX：Product Code
XXXX YYWW：Year&Week
YYWW ZZ
SSSSS ZZ：Assembly Code
SSSSS：Lot Code
(2) Package type
(1) Chip name
TO-220
ciss © Copyright reserved
1
Ver1.1
Guoke Saisi (Beijing) Technology Co., Ltd 010-82745680
CS10
N65A
Step-Down Converter
,
2．ABSOLUTE RATINGS
at T
C
= 25°C, unless otherwise specified
Symbol Parameter
Rating
Units
V
DSS
Drain-to-Source Voltage
650
V
I
D
Continuous Drain Current
10
A
Continuous Drain Current T
C
= 100 °C
6.6
A
I
DM
Pulsed Drain Current(Note1)
40
A
V
GS
Gate-to-Source Voltage
±30
V
E
AS
Single Pulse Avalanche Energy(Note2)
640
mJ
dv/dt
Peak Diode Recovery dv/dt(Note3)
5.0
V/ns
P
D
Power Dissipation TO-220
156
W
Derating Factor above 25°C
1.25
W/℃
P
D
Power Dissipation TO-220F
45
W
Derating Factor above 25°C
0.36
W/℃
T
J
，T
stg
Operating Junction and Storage Temperature Range
150，–55 to 150
℃
T
L
Maximum Temperature for Soldering
300
℃
3．Thermal characteristics
Thermal characteristics (No FullPAK) TO-220
Symbol Parameter
RATINGS
Units
R
θJC
Junction-to-Case
0.8
℃/W
R
θJA
Junction-to-Ambient
62.5
℃/W
Thermal characteristics (FullPAK) TO-220F
Symbol
Parameter
RATINGS
Units
R
θJC
Junction-to-Case
2.8
℃/W
R
θJA
Junction-to-Ambient
62.5
℃/W
ciss © Copyright reserved
2
Ver1.1
Guoke Saisi (Beijing) Technology Co., Ltd 010-82745680
CS1
0N65A