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Description
CS10N60A, the silicon N-channel Enhanced
MOSFETs, is obtained by advanced MOSFET
technology which reduce the conduction loss,
improve switching performance and enhance the
avalanche energy. The transistor is suitable device
for SMPS, high speed switching and general
purpose applications.
KEY CHARACTERISTICS
Parameter Value Unit
V
DS@Tj.max
650 V
I
D
10 A
R
DS(ON).Typ
0.62 Ω
FEATURES
Fast Switching
Low Crss
100% avalanche tested
Improved dv/dt capability
RoHS product
APPLICATIONS
High frequency switching mode power supply
Electronic ballast
ORDERING INFORMATION
Ordering Codes Package Product Code Packing
CS10N60A-P
TO-220
CS10N60A
Tube
CS10N60A-A
TO-220F Tube
CS10N60A-A
(1)CS10N60A:600V 10A
(2)A:TO-220F P:TO-220
XXXX
：
Product Code
XXXX YYWW
：
Year&Week
YYWW ZZ
SSSSS ZZ
：
Assembly Code
SSSSS
：
Lot Code
(2) Package type
(1) Chip name
ciss © Copyright reserved
1
Ver1.1
Guoke Saisi (Beijing) Technology Co., Ltd 010-82745680
CS10
N60A
2
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ABSOLUTE RATINGS
at T
C
= 25°C, unless otherwise specified
Symbol Parameter
Rating Units
V
DSS
Drain-to-Source Voltage
600 V
I
D
Continuous Drain Current
10 A
Continuous Drain Current T
C
= 100 °C
6.3 A
I
DM
Pulsed Drain Current(Note1)
40 A
V
GS
Gate-to-Source Voltage
±30 V
E
AS
Single Pulse Avalanche Energy(Note2)
580 mJ
dv/dt
Peak Diode Recovery dv/dt(Note3)
5.0 V/ns
P
D
Power Dissipation
TO-220
160 W
Derating Factor above 25°C
1.28
W/℃
P
D
Power Dissipation
TO-220F
45 W
Derating Factor above 25°C
0.36
W/℃
T
J
，T
stg
Operating Junction and Storage Temperature Range
150， –55 to 150
℃
T
L
Maximum Temperature for Soldering
300
℃
3
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Thermal characteristics
Thermal characteristics TO-220
Symbol Parameter
RATINGS Units
R
θJC
Junction-to-Case
0.78
℃/W
R
θJA
Junction-to-Ambient
62.5
℃/W
Thermal characteristics TO-220F
Symbol
Parameter RATINGS Units
R
θJC
Junction-to-Case
2.78
℃/W
R
θJA
Junction-to-Ambient
62.5
℃/W
ciss © Copyright reserved
2
Ver1.1
Guoke Saisi (Beijing) Technology Co., Ltd 010-82745680
CS10
N60A