Step-Down Converter
,
1.Description
CS10N40, the silicon N-channel Enhanced
MOSFETs, is obtained by advanced MOSFET
technology which reduce the conduction loss,
improve switching performance and enhance the
avalanche energy. The transistor is suitable
device for SMPS, high speed switching and
general purpose applications.
KEY CHARACTERISTICS
Parameter Value Unit
V
DS
400 V
I
D
10 A
R
DS(ON).Typ
0.4
FEATURES
Fast Switching
Low Crss
100% avalanche tested
Improved dv/dt capability
RoHS product
APPLICATIONS
High frequency switching mode power supply
ORDERING INFORMATION
Ordering Codes
Package
Product Code
Packing
CS10N40-P
TO-220
10N40
Tube
CS10N40-A
TO-220F
Tube
CS10N40-U
TO-251
Tube
Cs10N40-D
TO-252
Tape Reel
CS10N40-A
(1) CS10N40:700V 7A
(2) A:TO-220F PTO-220
U:TO-251 DTO-252
XXXXProduct Code
XXXX YYWWYear&Week
YYWW ZZ
SSSSS ZZAssembly Code
SSSSSLot Code
(2) Package type
(1) Chip name
ciss © Copyright reserved
1
Ver1.1
Guoke Saisi (Beijing) Technology Co., Ltd 010-82745680
CS10N40
Step-Down Converter
,
2ABSOLUTE RATINGS
at T
C
= 25°C, unless otherwise specified
Symbol Parameter
Rating
V
DSS
Drain-to-Source Voltage
400
I
D
Continuous Drain Current
10
Continuous Drain Current T
C
= 100 °C
4.9
I
DM
Pulsed Drain Current(Note1)
40
V
GS
Gate-to-Source Voltage
±30
E
AS
Single Pulse Avalanche Energy(Note2)
500
dv/dt
Peak Diode Recovery dv/dt(Note3)
5.0
P
D
Power Dissipation
TO-220, TO-251, TO-252
114
Derating Factor above 25°C
0.9
P
D
Power Dissipation
TO-220F
43.7
Derating Factor above 25°C
0.35
T
J
T
stg
Operating Junction and Storage Temperature Range
15055 to 150
T
L
Maximum Temperature for Soldering
300
3Thermal characteristics
Thermal characteristics (No FullPAK) TO-220\TO-251\TO-252
Symbol Parameter
RATINGS
Units
R
θJC
Junction-to-Case
1.1
/W
R
θJA
Junction-to-Ambient
62.5
/W
Thermal characteristics (FullPAK) TO-220F
Symbol Parameter
RATINGS
Units
R
θJC
Junction-to-Case
2.86
/W
R
θJA
Junction-to-Ambient
62.5
/W
ciss © Copyright reserved
2
Ver1.1
Guoke Saisi (Beijing) Technology Co., Ltd 010-82745680
CS10N40