ESD1202E
1 / 5
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-S6002
Rev.1.0,24-Apr-24
www.21yangjie.com
2- Line, Uni-directional, Transient Voltage Suppressor
Features
● Transient protection for each line according to
IEC61000-4-2(ESD): ±30kV contact, ±30kV air
IEC61000-4-5:10
A(tp=8/20μs)
● Low leakage current
● Ultra low clamping voltage
● RoHS Compliant
Applications
●Switches / Buttons
●
Test Equipment/Instrumentation
●
Point-of-Sale Terminals
●
Medical Equipment
●
Notebooks / Desktops / Servers
●
Computer Peripherals
Mechanical Data
● Package: SOT-23
● Lead Finish: Matte Tin
● Case Material: “Green” Molding Compound
● Moisture Sensitivity: Level 1 per J-STD-020
● Marking Information: See Below
■
Definitions of electrical characteristics
VRWM
IR
VBR
VC
IPP
IF
VF
Reverse stand-off voltage
Reverse leakage current
Reverse breakdown voltage
Clanping voltage
Peak pulse current
Forward Current
Forward Voltage@I
F
IR
IBR
IPP
VC VRWMVBR
IF
VF
COMPLIANT
RoHS
SOT-23
ESD1202E
2 / 5
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-S6002
Rev.1.0,24-Apr-24
www.21yangjie.com
■
Maximum Ratings
PARAMETER SYMBOL LIMITS UNIT
Peak pulse power (t
p
= 8/20μs)
P
pk
280 W
Peak pulse current (t
p
= 8/20μs) I
PP
10 A
ESD according to IEC61000-4-2 air discharge
V
ESD
±30
KV
ESD according to IEC61000-4-2 contact discharge
±30
Junction temperature T
J
-55~150
℃
Storage temperature T
STG
-55~150
℃
Notes:
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and
operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied.
■
Electrical Characteristics（T
J
=25℃）
PARAMETER Symbol UNIT Conditions Min Typ Max
Reverse Standoff Voltage V
RWM
V
12
Reverse leakage current I
R
μA V
RWM
= 12V
1.0
Reverse breakdown voltage
V
BR
V I
T
= 1mA
13.1 16.5
Forward Voltage V
F
V I
F
=10mA
1.25
Clamping voltage
1)
V
CL
V I
PP
= 16A, t
p
= 0.2/100ns(TLP)
19
Dynamic resistance
2)
R
DYN
Ω TLP, tp=100ns, I/O to Ground
0.18
Clamping voltage
1)
V
C
V
I
PP
= 1A, t
p
= 8/20μs
18.5
I
PP
= 10A, t
p
= 8/20μs
28
Junction capacitance C
J
pF V
R
= 0V, f = 1MHz
55 70
Notes:
(1). Non-repetitive current pulse, according to IEC61000-4-5.
(2). TLP parameter: Z
0
= 50Ω, t
p
= 100ns, t
r
= 2ns, averaging window from 60ns to 80ns. R
DYN
is calculated from 4A to 16A.
■
Ordering Information (Example)
PREFERED P/N
PACKING
CODE
UNIT WEIGHT(mg)
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY MODE
ESD1202E F2 Approximate 10 3000 30000 120000 7 reel