安徽钜芯半导体科技有限公司
ANHUI JUXIN SEMICONDUCTOR TECHNOLOGY CO., LTD.
SS52 THRU SS525
SCHOTTK Y BARRIER RECTIFIER
REVERSE VOLTAGE: 20 to 250 VOLTS
FORWARD CURRENT : 5 AMPERE
FEATURES
· Low switching noise
· Low forward voltage drop
· High current capability
· High switching capability
· High surge capability
· High reliability
MECHANICAL DATA
Case: Molded plastic,SMA
Epoxy: UL 94V-O rate flame retardant
Lead: Axial leads, solderable per MIL-STD-202,
method 208 guaranteed
Polarity: Color band denotes cathode end
Mounting position: Any
Weight: 0.00022ounce, 0.0064gram
Maximum Ratings and Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60H
Z
, resistive or inductive load.
For capacitive load, derate current by 20%.
PARAMETER
Symbols
SS52
SS53
SS54
SS545
SS55
SS56
SS58
SS510
SS515
SS520
SS525
Units
Markinf code
SS52
SS53
SS54
SS545
SS55
SS56
SS58
SS510
SS515
SS520
SS525
Maximum Recurrent Peak Reverse Voltage V
RRM
20 30 40 45 50 60 80 100 150 200 250
Volts
Maximum RMS Voltage V
RMS
14 21 28 31 35 42 56 70 105 140 175
Volts
Maximum DC Blocking Voltage V
DC
20 30 40 45 50 60 80 100 150 200 250
Volts
Maximum Average Forward Current
I
F(AV)
5.0
Amp
Peak Forward Surge Current:8.3ms single half
I
FSM
100
Amp
sine-wave superimposed on rated load
Rating for fusing(t<8.3ms)
I
2
t
41.5
A2 s
Maximum Forward Voltage at 5.0A V
F
0.55 0.70 0.85 0.92 0.95
Volts
Maximum DC Reverse Current at Ta= 25℃
Rated DC Blocking Voltage Ta=100℃
I
R
0.1
10
0.05
5
mAmp
Typical Junction Capacitance (Note 1) Cj
170 100
pF
Typical Thermal Resistance (Note 2) R(JA)
45
℃/W
Operating Temperature Range T
J
-55 to +150
℃
Storage Temperature Range Tstg
-55 to +150
℃
Note:
1. Measured at 1.0 MHz and Applied reverse Voltage of 4.0V D.C
2. Device mounted on FR-4 substrate, 1"*1", 2oz, single-sided, PC boards with 0.1"*0.15" copper pad.
安徽钜芯半导体科技有限公司
ANHUI JUXIN SEMICONDUCTOR TECHNOLOGY CO., LTD.
SS52 THRU SS525
SCHOTTK Y BARRIER RECTIFIER