ZENER DIODE
FEATURES：
z Planar Die C
onstruction
z 350mW Pow
e
r Dissip
ation on Ceramic PCB
z Gener
al Purpose, Medium Current
z Ideally Suited for
Automated Assembly
Processes
z A
v
ailable in Lead Fre
e Version
Maximum Ratings(Ta=25℃ unless otherwise specified)
Charac
teristic Symbol Value Unit
For
ward Voltage (Note 2) @ I
F
= 10mA V
F
0.9 V
Powe
r Dissipation(Note 1) P
D
350 mW
Thermal Resistance from Juncti
on to Ambient R
θJA
357
/℃ W
Junction Tempe
rature T
J
150
℃
SOD-123
Storage
Temperature
T
ST
G
-55~+150
℃
BZT52C2V4-BZT52C43
1
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ELECTRICAL CHARACTERISTICS
T
a
=25℃ unless otherwise specified
Z
ener Voltage Range (Note 2)
Maximum Zener Impedance
(Note 3)
Maximum
Reverse
Current
(Note 2)
Typical
Temperature
Coefficent
@I
ZT
C
Te
s t
Current
I
ZT
C
V
Z
@I
ZT
I
ZT
Z
ZT
@I
ZT
Z
ZK
@I
ZK
I
ZK
I
R
V
R
mV/°C
T
ype
Number
Type
Code
Nom(V) Min(V) Max(V) mA Ω mA uA V Min Max mA
B
ZT52C2V4 WX 2.4 2.20 2.60 5 100 600 1.0 50 1.0 -3.5 0 5
B
ZT52C2V7 W1 2.7 2.5 2.9 5 100 600 1.0 20 1.0 -3.5 0 5
B
ZT52C3V0 W2 3.0 2.8 3.2 5 95 600 1.0 10 1.0 -3.5 0 5
B
ZT52C3V3 W3 3.3 3.1 3.5 5 95 600 1.0 5 1.0 -3.5 0 5
B
ZT52C3V6 W4 3.6 3.4 3.8 5 90 600 1.0 5 1.0 -3.5 0 5
B
ZT52C3V9 W5 3.9 3.7 4.1 5 90 600 1.0 3 1.0 -3.5 0 5
B
ZT52C4V3 W6 4.3 4.0 4.6 5 90 600 1.0 3 1.0 -3.5 0 5
B
ZT52C4V7 W7 4.7 4.4 5.0 5 80 500 1.0 3 2.0 -3.5 0.2 5
B
ZT52C5V1 W8 5.1 4.8 5.4 5 60 480 1.0 2 2.0 -2.7 1.2 5
B
ZT52C5V6 W9 5.6 5.2 6.0 5 40 400 1.0 1 2.0 -2.0 2.5 5
B
ZT52C6V2 WA 6.2 5.8 6.6 5 10 150 1.0 3 4.0 0.4 3.7 5
B
ZT52C6V8 WB 6.8 6.4 7.2 5 15 80 1.0 2 4.0 1.2 4.5 5
B
ZT52C7V5 WC 7.5 7.0 7.9 5 15 80 1.0 1 5.0 2.5 5.3 5
B
ZT52C8V2 WD 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 5
B
ZT52C9V1 WE 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 5
B
ZT52C10 WF 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 5
B
ZT52C11 WG 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 5
B
ZT52C12 WH 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 5
B
ZT52C13 WI 13 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0 5
B
ZT52C15 WJ 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13.0 5
B
ZT52C16 WK 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14.0 5
B
ZT52C18 WL 18 16.8 19.1 5 45 225 1.0 0.1 12.6 12.4 16.0 5
B
ZT52C20 WM 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 5
B
ZT52C22 WN 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 20.0 5
B
ZT52C24 WO 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0 5
B
ZT52C27 WP 27 25.1 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3 2
B
ZT52C30 WQ 30 28.0 32.0 2 80 300 0.5 0.1 21.0 24.4 29.4 2
B
ZT52C33 WR 33 31.0 35.0 2 80 325 0.5 0.1 23.1 27.4 33.4 2
B
ZT52C36 WS 36 34.0 38.0 2 90 350 0.5 0.1 25.2 30.4 37.4 2
B
ZT52C39 WT 39 37.0 41.0 2 130 350 0.5 0.1 27.3 33.4 41.2 2
B
ZT52C43 WU 43 40.0 46.0 5 100 700 1.0 0.1 32 10.0 12.0 5
Notes: 1.
Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm
2
2. Short durati
on test pulse used to minimize self-heating effect
3. f=1kH
Z
BZT52C2V4-BZT52C43
2
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