3ODVWLFEncapsulate Voltage Regulator
Three-te
rminal positive voltage regulator
FEATURE
Maximum Output
urrent
I
O:
0.1 A
Output oltage
V
: 5 V
Continuous otal issipation
P
D
: 0.25 W (T
a
= 25 ℃ )
SOT-23
1. OUT
2. IN
3. GND
Solid dot = Green molding compound device,
if none,the normal device.
2
C0
0.1ȝF
A
B
SOL
U
T
E M
A
X
I
MUM R
A
T
I
NGS (Op
e
ratin
g
temp
eratu
r
e ran
ge
applies unless otherwise specified)
ELECTRICAL CHARACTERISTICS AT SPECIFIED VIRTUAL JUNCTION TEMPERATURE (Vi=10V,Io=40mA,Ci=0.33uF,,Co=0.1uF, unless otherwise specified )
Parameter Symbol Test conditions Min Typ Max Unit
V
7VVi20V, Io=
1mA~40mA 4.75 5.0 5.25 V
Output volt
age
V
o
Io
=1
mA~7
0mA
4.75 5.0 5.25 V
Io=1mA~
100mA
25℃
15 60
mV
Loa
d Reg
u
lati
o
n
ǻ
Vo
Io=1mA~40mA
25℃
8 30 mV
7VVi
l
20V
32 150 mV
Line regulation ǻ
Vo
8VVi20V
25℃
26 100 mV
Quiescent Current Iq
25℃
3.8 6 mA
ǻIq 8VVi20V 1.5 mA
Quiescent Current Cha
nge
ǻIq 1mAV
l
40mA
Output Noise Voltage V
N
10Hzf100KHz
25℃
42
Ripple Rejection RR
8VVi20V,f=120Hz
41 49 dB
Dropout Vo
ltage Vd
25℃
1.7 V
TYP
ICA
L APPLICATION Vi
3
1 Vo
C
Ci
0.33ȝF
Note: Bypass capacitors are recommended for optimum stability and transient response and should be located as close as
Possibleto the regulators.
*
Pulse test.
mA
0.1
P
a
r
ame
ter Symbol Value Unit
Input
V
o
lt
ag
e V
i
30 V
Thermal Resistance from Ju
nction to Ambient
R
șJA
160
Я/W
Operating
Ju
nction
T
emper
a
ture Ran
ge T
OPR
-40~+125
Я
Storage Te
mperature Range T
STG
-65~+150
Я
25℃
V
V
4%
3%
2%
4.85
4.80
4.90
5.0
5.0
5.0
5.15
5.20
5.10
μV/Vo
0-12
5Я
0
-125Я
0-125Я
0-125Я
78L05S
1
www.slkormicro.com
Typical Characteristics
-
25
0 25 50 75 100 125
4.0
4.5
5.0
5.5
6.0
0 5 10 15 20 25 30
0
1
2
3
4
5
6
7
45678910
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0 5 10 15 20 25 30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.00 0.05 0.10 0.15 0.20 0.25
0
1
2
3
4
5
6
7
-
40
-25 0 25 50 75 100 125
0
50
100
150
200
250
300
V
in
=10V
I
O
=5mA
Output
Voltage vs Junction Temperature
OU
TPUT VOLTAGE V
O
(V)
JUNCTION TEMPERATURE T
J
( )
℃
I
O
=0mA
T
J
=25
℃
OU
TPUT VOLTAGE V
O
(V)
INPUT VO
LTAGE V
IN
(V)
Ou
tput Characteristics
I
O
=0mA
I
O
=40m
A
I
O
=70m
A
I
O
=100m
A
T
J
=25
℃
OU
TPUT VOLTAGE V
O
(V)
INPUT VOLTAGE V
IN
(V)
Dropout
Characteristics
QUIESCENT CURRENT I
Q
(mA)
INPUT VO
LTAGE V
IN
(V)
Qu
iescent Current vs Input Voltage
I
O
=0mA
T
J
=25
℃
-40
Cu
rrent C ut-off Grid Voltag e
OU
TPUT VOLTAGE V
O
(V)
OUTPUT CURRENT I
O
(A)
V
IN
=10V
T
J
=25
℃
Pulsed
Po
wer Derating Curve
POWER DISSIPAT
ION P
D
(mW)
JUNCTION TEMPERATURE T
J
( )
℃
78L05S
2
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