LKB40N65TF1
Version 1.2 1 www.lonten.cc
Lonten 650V, 40A, Field Stop Trench IGBT
Description
LKB40N65TF1 IGBT is obtained by novel field
stop IGBT technology, which provides the best
compromise between switching and
conduction losses.
Features
⚫ maximum junction temperature: T
vj
=150°C
⚫ low V
CE(sat)
⚫ small oscillation of Vge during turn-on
⚫ with fast recovery anti-parallel diode
⚫ RoHS compliant
Applications
⚫ uninterruptible power supplies
⚫ welding machines
⚫ converters
Product Summary
V
CES
650V
I
C
40A
V
CE(sat)
@ T
vj
=25°C
2.0V
Pin Configuration
TO-247
LKB40N65TF1
Version 1.2 2 www.lonten.cc
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter Voltage
V
CES
650
V
DC collector current, limited by T
vjmax
T
C
= 25°C
T
C
= 100°C
I
C
80
40
A
Pulsed collector current
, t
p
limited by T
vjmax
I
Cpuls
120
A
Diode forward current, limited by T
vjmax
T
C
= 25°C
T
C
= 100°C
I
F
80
40
A
Diode pulsed current, t
p
limited by T
vjmax
I
Fpuls
120
A
Gate-emitter voltage
V
GES
±30
V
Short circuit withstand time
V
GE
= 15.0V, V
CC
��� 600V
Allowed number of short circuits < 1000
Time between short circuits: ≥1.0s
T
vj
= 150°C
t
SC
10
μs
Power dissipation (T
C
= 25°C)
Power dissipation (T
C
= 100°C)
P
tot
227
91
W
Operating junction temperature
T
vj
-55 to +150
°C
Storage temperature
T
stg
-55 to +150
°C
Soldering temperature, wavesoldering only allowed at
leads. (1.6mm from case for 10s)
T
sold
260
°C
Thermal Characteristics
Parameter
Symbol
Value
Unit
IGBT thermal resistance, junction-to-case
R
θJC
0.55
℃/W
Diode thermal resistance, junction-to-case
R
θJC
0.56
℃/W
Thermal resistance, junction-to-ambient
R
θJA
40
℃/W
Package Marking and Ordering Information
Device
Device Package
Marking
LKB40N65TF1
TO-247
LKB40N65TF1